Inventor · disambiguated record
Steven J. Fong
Also filed as: FONG STEVEN · FONG STEVEN J
11 granted patents·319 citations·filing 1998–2011
91Inventor score
Top patents by PatentIndex Score
11 records- 0193US6064595AFloating gate memory apparatus and method for selected programming thereofVANTIS CORP·Filed 1998·Granted May 16, 2000·123 cites·24 claims
- 0287US6028789AZero-power CMOS non-volatile memory cell having an avalanche injection elementVANTIS CORP·Filed 1999·Granted Feb 22, 2000·66 cites·20 claims
- 0379US6326663B1Avalanche injection EEPROM memory cell with P-type control gateVANTIS CORP·Filed 1999·Granted Dec 4, 2001·37 cites·23 claims
- 0474US6294810B1EEPROM cell with tunneling at separate edge and channel regionsVANTIS CORP·Filed 1998·Granted Sep 25, 2001·32 cites·19 claims
- 0573US6570212B1Complementary avalanche injection EEPROM cellLATTICE SEMICONDUCTOR CORP·Filed 2000·Granted May 27, 2003·19 cites·14 claims
- 0669US7989911B1Shallow trench isolation (STI) with trench liner of increased thicknessLATTICE SEMICONDUCTOR CORP·Filed 2009·Granted Aug 2, 2011·3 cites·18 claims
- 0760US7985656B1Shallow trench isolation (STI) with trench liner of increased thicknessLATTICE SEMICONDUCTOR CORP·Filed 2009·Granted Jul 26, 2011·1 cites·5 claims
- 0856US6215700B1PMOS avalanche programmed floating gate memory cell structureVANTIS CORP·Filed 1999·Granted Apr 10, 2001·16 cites·24 claims
- 0949US6404006B2EEPROM cell with tunneling across entire separated channelsVANTIS CORP·Filed 1998·Granted Jun 11, 2002·12 cites·24 claims
- 1046US6294811B1Two transistor EEPROM cellVANTIS CORP·Filed 1999·Granted Sep 25, 2001·10 cites·19 claims
- 1131US8539409B1Simultaneous development of complementary IC familiesMURRAY SHAWN·Filed 2011·Granted Sep 17, 2013·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →