Inventor · disambiguated record
Stefan Gernhardt
Also filed as: GERNHARDT STEFAN
9 granted patents·4 pending applications·26 citations·filing 2002–2006
84Inventor score
Top patents by PatentIndex Score
13 records- 0158US7378700B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 27, 2008·1 cites·10 claims
- 0256US6815234B2Reducing stress in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 9, 2004·8 cites·10 claims
- 0352US6940111B2Radiation protection in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 6, 2005·5 cites·13 claims
- 0451US6946735B2Side-wall barrier structure and method of fabricationINFINEON AG·Filed 2002·Granted Sep 20, 2005·5 cites·15 claims
- 0547US7101785B2Formation of a contact in a device, and the device including the contactINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 5, 2006·3 cites·7 claims
- 0646US7316980B2Method for forming ferrocapacitors and FeRAM devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 8, 2008·1 cites·16 claims
- 0744US7061035B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 13, 2006·1 cites·1 claims
- 0844US6839220B1Multi-layer barrier allowing recovery anneal for ferroelectric capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 4, 2005·2 cites·16 claims
- 0936US2004087080A1Methods for producing thin layers, such as for use in integrated circuitsFiled 2002·Application pending·0 cites
- 1036US2004163233A1Methods of forming electrical connections within ferroelectric devicesFiled 2003·Application pending·0 cites
- 1135US7001780B2Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the methodTOSHIBA KK·Filed 2003·Granted Feb 21, 2006·0 cites·6 claims
- 1234US2004201049A1Suppression of electrode re-crystallisation in a ferrocapacitorFiled 2003·Application pending·0 cites
- 1333US2005070030A1Device and method for forming a contact to a top electrode in ferroelectric capacitor devicesFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →