Inventor · disambiguated record
Steven T. Harshfield
Also filed as: HARSHFIELD STEVEN T
37 granted patents·1 pending application·6,559 citations·filing 1993–2013
99Inventor score
Files withMICRON TECHNOLOGY INC30ROUND ROCK RES LLC3HARSHFIELD STEVEN T2MICRON SEMICONDUCTOR INC2MCTEER ALLEN1
Top patents by PatentIndex Score
38 records- 0199US6563156B2Memory elements and methods for making sameMICRON TECHNOLOGY INC·Filed 2001·Granted May 13, 2003·343 cites·7 claims
- 0299US6440837B1Method of forming a contact structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 27, 2002·317 cites·23 claims
- 0399US6420725B1Method and apparatus for forming an integrated circuit electrode having a reduced contact areaMICRON TECHNOLOGY INC·Filed 1995·Granted Jul 16, 2002·547 cites·2 claims
- 0499US6117720AMethod of making an integrated circuit electrode having a reduced contact areaMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 12, 2000·627 cites·18 claims
- 0599US6077729AMemory array having a multi-state element and method for forming such array or cellis thereofMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 20, 2000·625 cites·20 claims
- 0699US6031287AContact structure and memory element incorporating the sameMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 29, 2000·865 cites·59 claims
- 0799US5869843AMemory array having a multi-state element and method for forming such array or cells thereofMICRON TECHNOLOGY INC·Filed 1995·Granted Feb 9, 1999·671 cites·21 claims
- 0899US5818749AIntegrated circuit memory deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 6, 1998·315 cites·47 claims
- 0998US7687793B2Resistance variable memory cellsMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 30, 2010·69 cites·16 claims
- 1098US6607974B2Method of forming a contact structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 19, 2003·295 cites·7 claims
- 1198US6111264ASmall pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 29, 2000·417 cites·28 claims
- 1298US5814527AMethod of making small pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 29, 1998·560 cites·38 claims
- 1397US6455424B1Selective cap layers over recessed polysilicon plugsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 24, 2002·124 cites·40 claims
- 1497US5851882AZPROM manufacture and design and methods for forming thin structures using spacers as an etching maskMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 22, 1998·168 cites·31 claims
- 1595US7102150B2PCRAM memory cell and method of making sameHARSHFIELD STEVEN T·Filed 2001·Granted Sep 5, 2006·103 cites·29 claims
- 1695US5492853AMethod of forming a contact using a trench and an insulation layer during the formation of a semiconductor deviceMICRON SEMICONDUCTOR INC·Filed 1994·Granted Feb 20, 1996·112 cites·18 claims
- 1793US5612558AHemispherical grained silicon on refractory metal nitrideMICRON TECHNOLOGY INC·Filed 1995·Granted Mar 18, 1997·111 cites·5 claims
- 1890US7235419B2Method of making a memory cellMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 26, 2007·11 cites·30 claims
- 1990US7071021B2PCRAM memory cell and method of making sameMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 4, 2006·34 cites·36 claims
- 2089US5379250AZener programmable read only memoryMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 3, 1995·67 cites·15 claims
- 2186US6831330B2Method and apparatus for forming an integrated circuit electrode having a reduced contact areaMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·22 cites·49 claims
- 2283US5646879AZener programmable read only memoryMICRON TECHNOLOGY INC·Filed 1994·Granted Jul 8, 1997·42 cites·18 claims
- 2380US7271440B2Method and apparatus for forming an integrated circuit electrode having a reduced contact areaMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 18, 2007·14 cites·47 claims
- 2478US7687796B2Method and apparatus for forming an integrated circuit electrode having a reduced contact areaMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 30, 2010·3 cites·19 claims
- 2578US6440795B1Hemispherical grained silicon on conductive nitrideMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 27, 2002·18 cites·15 claims
- 2675US8362625B2Contact structure in a memory deviceROUND ROCK RES LLC·Filed 2011·Granted Jan 29, 2013·2 cites·8 claims
- 2775US6413812B1Methods for forming ZPROM using spacers as an etching maskMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 2, 2002·13 cites·11 claims
- 2873US8076783B2Memory devices having contact featuresHARSHFIELD STEVEN T·Filed 2009·Granted Dec 13, 2011·3 cites·16 claims
- 2972US5899725AMethod of forming a hemispherical grained silicon on refractory metal nitrideMICRON TECHNOLOGY INC·Filed 1997·Granted May 4, 1999·28 cites·28 claims
- 3064US7078755B2Memory cell with selective deposition of refractory metalsMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 18, 2006·6 cites·9 claims
- 3155US8786101B2Contact structure in a memory deviceROUND ROCK RES LLC·Filed 2013·Granted Jul 22, 2014·0 cites·8 claims
- 3254US8017453B2Method and apparatus for forming an integrated circuit electrode having a reduced contact areaROUND ROCK RES LLC·Filed 2010·Granted Sep 13, 2011·0 cites·7 claims
- 3354US7504730B2Memory elementsMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 17, 2009·3 cites·11 claims
- 3452US5719418AContact-substrate for a semiconductor device comprising a contourMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 17, 1998·12 cites·8 claims
- 3548US6187631B1Hemispherical grained silicon on conductive nitrideMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 13, 2001·9 cites·13 claims
- 3645US2007012987A1Memory cell with selective deposition of refractory metalsMCTEER ALLEN·Filed 2006·Application pending·0 cites
- 3742USRE40842EMemory elements and methods for making sameMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 14, 2009·0 cites·7 claims
- 3835US6077740AMethod for forming a semiconductor device contact structure comprising a contourMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 20, 2000·3 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →