Inventor · disambiguated record
Steven W. Johnston
Also filed as: JOHNSTON STEVEN · JOHNSTON STEVEN W
21 granted patents·5 pending applications·285 citations·filing 1987–2010
95Inventor score
Top patents by PatentIndex Score
26 records- 0196US7071126B2Densifying a relatively porous materialINTEL CORP·Filed 2005·Granted Jul 4, 2006·36 cites·17 claims
- 0295US7220671B2Organometallic precursors for the chemical phase deposition of metal films in interconnect applicationsINTEL CORP·Filed 2005·Granted May 22, 2007·66 cites·17 claims
- 0393US7694413B2Method of making a bottomless viaINTEL CORP·Filed 2006·Granted Apr 13, 2010·18 cites·20 claims
- 0487US7335587B2Post polish anneal of atomic layer deposition barrier layersINTEL CORP·Filed 2005·Granted Feb 26, 2008·13 cites·17 claims
- 0584US7279423B2Forming a copper diffusion barrierINTEL CORP·Filed 2002·Granted Oct 9, 2007·26 cites·10 claims
- 0684US6369603B1Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materialsMIDWEST RESEARCH INST·Filed 2000·Granted Apr 9, 2002·39 cites·19 claims
- 0783US7459392B2Noble metal barrier and seed layer for semiconductorsINTEL CORP·Filed 2005·Granted Dec 2, 2008·12 cites·9 claims
- 0878US7550385B2Amine-free deposition of metal-nitride filmsINTEL CORP·Filed 2005·Granted Jun 23, 2009·6 cites·10 claims
- 0972US6682989B1Plating a conductive material on a dielectric materialINTEL CORP·Filed 2002·Granted Jan 27, 2004·12 cites·14 claims
- 1064US5419462AApparatus for recharging a heated receptacle with particulate matter at a controlled velocityALBEMARLE CORP·Filed 1994·Granted May 30, 1995·16 cites·5 claims
- 1162US6867473B2Plating a conductive material on a dielectric materialINTEL CORP·Filed 2003·Granted Mar 15, 2005·6 cites·11 claims
- 1259US6596888B2MOCVD of WNx thin films using imido precursorsUNIV FLORIDA·Filed 2001·Granted Jul 22, 2003·9 cites·12 claims
- 1357US8227335B2Forming a copper diffusion barrierJOHNSTON STEVEN W·Filed 2007·Granted Jul 24, 2012·1 cites·5 claims
- 1456US7601637B2Atomic layer deposited tantalum containing adhesion layerINTEL CORP·Filed 2008·Granted Oct 13, 2009·0 cites·20 claims
- 1547US7435679B2Alloyed underlayer for microelectronic interconnectsINTEL CORP·Filed 2004·Granted Oct 14, 2008·2 cites·6 claims
- 1645US4730070AStabilization of amine alanesETHYL CORP·Filed 1987·Granted Mar 8, 1988·6 cites·11 claims
- 1744US4866191AStabilization of amine alanesETHYL CORP·Filed 1988·Granted Sep 12, 1989·2 cites·10 claims
- 1843US7605469B2Atomic layer deposited tantalum containing adhesion layerINTEL CORP·Filed 2004·Granted Oct 20, 2009·0 cites·6 claims
- 1943US6275060B1Apparatus and method for measuring minority carrier lifetimes in semiconductor materialsMIDWEST RESEARCH INST·Filed 1999·Granted Aug 14, 2001·11 cites·41 claims
- 2041US2004229452A1Densifying a relatively porous materialFiled 2003·Application pending·0 cites
- 2140US2010164108A1Integrating a bottomless via to promote adsorption of antisuppressor on exposed copper surface and enhance electroplating superfill on noble metalsJOHNSTON STEVEN W·Filed 2010·Application pending·0 cites
- 2239US4782171AStabilization of amine alanesETHYL CORP·Filed 1987·Granted Nov 1, 1988·4 cites·6 claims
- 2339US2006063379A1Forming a combined copper diffusion barrier and seed layerDORY THOMAS S·Filed 2004·Application pending·0 cites
- 2438US7241706B2Low k ILD layer with a hydrophilic portionINTEL CORP·Filed 2004·Granted Jul 10, 2007·0 cites·24 claims
- 2535US2006286800A1Method for adhesion and deposition of metal films which provide a barrier and permit direct platingDOMINGUEZ JUAN E·Filed 2005·Application pending·0 cites
- 2632US2006131276A1Uniformity in batch spray processing using independent cassette rotationJOHNSTON STEVEN W·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →