Inventor · disambiguated record
Stefan Tegen
Also filed as: TEGEN STEFAN
54 granted patents·18 pending applications·83 citations·filing 2004–2025
97Inventor score
Files withINFINEON TECHNOLOGIES DRESDEN GMBH22INFINEON TECHNOLOGIES AG15INFINEON TECHNOLOGIES AUSTRIA AG11QIMONDA AG8INFINEON TECH DRESDEN GMBH & CO KG7
Top patents by PatentIndex Score
72 records- 0185US11342467B2Electronic circuit with a transistor device, a level shifter and a drive circuitINFINEON TECH DRESDEN GMBH & CO KG·Filed 2021·Granted May 24, 2022·1 cites·25 claims
- 0285US8987090B2Method of manufacturing a semiconductor device with device separation structuresINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Mar 24, 2015·6 cites·10 claims
- 0385US8980714B2Semiconductor device with buried gate electrode structuresINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Mar 17, 2015·6 cites·11 claims
- 0484US7371645B2Method of manufacturing a field effect transistor device with recessed channel and corner gate deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 13, 2008·11 cites·13 claims
- 0582US7659602B2Semiconductor component with MIM capacitorQIMONDA AG·Filed 2008·Granted Feb 9, 2010·9 cites·29 claims
- 0680US7851356B2Integrated circuit and methods of manufacturing the sameQIMONDA AG·Filed 2007·Granted Dec 14, 2010·8 cites·11 claims
- 0778US12094969B2Transistor device having a field plateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Sep 17, 2024·0 cites·16 claims
- 0878US7291532B2Low resistance contact in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 6, 2007·8 cites·17 claims
- 0975US9812369B2BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 7, 2017·2 cites·25 claims
- 1074US11824114B2Transistor device having a field plate in an elongate active trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
- 1173US9368408B2Method of manufacturing a semiconductor device with buried channel/body zone and semiconductor deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Jun 14, 2016·2 cites·10 claims
- 1272US7763514B2Method of manufacturing a transistor and memory cell arrayQIMONDA AG·Filed 2007·Granted Jul 27, 2010·5 cites·9 claims
- 1370US10020387B2Method for manufacturing a bipolar junction transistorINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Jul 10, 2018·1 cites·21 claims
- 1469US11545568B2Transistor device and method of forming a field plate in an elongate active trench of a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 3, 2023·0 cites·18 claims
- 1568US9209248B2Power transistorINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Dec 8, 2015·2 cites·36 claims
- 1667US9107335B2Method for manufacturing an integrated circuit and an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 11, 2015·2 cites·19 claims
- 1766US9653305B2Semiconductor component with field electrode between adjacent semiconductor fins and method for producing such a semiconductor componentINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2015·Granted May 16, 2017·1 cites·10 claims
- 1866US7456086B2Semiconductor having structure with openingsINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 25, 2008·2 cites·18 claims
- 1966US7439125B2Contact structure for a stack DRAM storage capacitorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 21, 2008·3 cites·16 claims
- 2065US2022254934A1Electronic circuitINFINEON TECH DRESDEN GMBH & CO KG·Filed 2022·Application pending·0 cites
- 2163US7473952B2Memory cell array and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 6, 2009·3 cites·23 claims
- 2262US9269711B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Feb 23, 2016·1 cites·12 claims
- 2361US7804708B2Integrated circuit including an array of memory cells and methodQIMONDA AG·Filed 2008·Granted Sep 28, 2010·1 cites·6 claims
- 2460US12439636B2Transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Oct 7, 2025·0 cites·29 claims
- 2560US11183598B2Electronic circuit with a transistor device and a level shifterINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted Nov 23, 2021·0 cites·31 claims
- 2660US2025203925A1Transistor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2759US10608103B2Method for forming vertical field effect transistor devices having alternating drift regions and compensation regionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 31, 2020·0 cites·15 claims
- 2858US12414349B2Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Sep 9, 2025·0 cites·18 claims
- 2958US10672895B2Method for manufacturing a bipolar junction transistorINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 3058US8013377B2Method for producing an integrated circuit and arrangement comprising a substrateQIMONDA AG·Filed 2008·Granted Sep 6, 2011·1 cites·6 claims
- 3157US7952138B2Memory circuit with field effect transistor and method for manufacturing a memory circuit with field effect transistorQIMONDA AG·Filed 2007·Granted May 31, 2011·1 cites·11 claims
- 3256US8284596B2Integrated circuit including an array of diodes coupled to a layer of resistance changing materialKASKO IGOR·Filed 2008·Granted Oct 9, 2012·4 cites·8 claims
- 3355US2023352582A1Power transistor device and method of fabricating a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 3454US12107152B2Semiconductor die with a power device and method of manufacturing the sameINFINEON TECH DRESDEN GMBH & CO KG·Filed 2022·Granted Oct 1, 2024·0 cites·14 claims
- 3554US10490642B2Semiconductor device having silicide layersINFINEON TECH DRESDEN GMBH & CO KG·Filed 2018·Granted Nov 26, 2019·0 cites·16 claims
- 3654US7482221B2Memory device and method of manufacturing a memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 27, 2009·1 cites·8 claims
- 3753US10290735B2Methods of manufacturing a semiconductor device with a buried doped region and a contact structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted May 14, 2019·0 cites·20 claims
- 3853US9941375B2Method for manufacturing a semiconductor device having silicide layersINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Apr 10, 2018·0 cites·7 claims
- 3953US9251934B2Method for manufacturing a plurality of nanowiresINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 2, 2016·0 cites·25 claims
- 4053US7777266B2Conductive line comprising a capping layerQIMONDA AG·Filed 2007·Granted Aug 17, 2010·1 cites·14 claims
- 4152US10483535B2Apparatus comprising a plurality of nanowiresINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 19, 2019·0 cites·19 claims
- 4252US9984930B2Method for processing a carrierINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Granted May 29, 2018·0 cites·16 claims
- 4351US10971620B2Method for producing a semiconductor arrangementINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted Apr 6, 2021·0 cites·38 claims
- 4451US10312159B2BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 4, 2019·0 cites·9 claims
- 4551US9412601B2Method for processing a carrierINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Aug 9, 2016·0 cites·12 claims
- 4650US10164086B2Vertical field effect transistor device having alternating drift regions and compensation regionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 25, 2018·0 cites·22 claims
- 4750US9876105B2Semiconductor device with buried doped region and contact structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2015·Granted Jan 23, 2018·0 cites·15 claims
- 4850US2025254910A1Transistor device and method of forming a gate electrode and a field plate in a columnar trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 4949US9318550B2Semiconductor device with device separation structuresINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2015·Granted Apr 19, 2016·0 cites·9 claims
- 5049US9276107B2Semiconductor device having buried gate electrode structuresINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2015·Granted Mar 1, 2016·0 cites·8 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →