Inventor · disambiguated record
Stefan Uhlenbrock
Also filed as: UHLENBROCK STEFAN
61 granted patents·9 pending applications·2,355 citations·filing 1998–2023
99Inventor score
Top patents by PatentIndex Score
70 records- 0199US9865456B1Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structuresMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 9, 2018·401 cites·26 claims
- 0298US7393785B2Methods and apparatus for forming rhodium-containing layersMICRON TECHNOLOGY INC·Filed 2007·Granted Jul 1, 2008·65 cites·20 claims
- 0398US6730164B2Systems and methods for forming strontium- and/or barium-containing layersMICRON TECHNOLOGY INC·Filed 2002·Granted May 4, 2004·173 cites·60 claims
- 0498US6452017B1Complexes having tris(pyrazolyl)methanate ligandsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 17, 2002·288 cites·26 claims
- 0597US7250367B2Deposition methods using heteroleptic precursorsMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 31, 2007·140 cites·45 claims
- 0697US7115166B2Systems and methods for forming strontium- and/or barium-containing layersMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 3, 2006·130 cites·54 claims
- 0797US5962716AMethods for preparing ruthenium and osmium compoundsMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 5, 1999·94 cites·15 claims
- 0896US6541067B1Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using sameMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 1, 2003·104 cites·43 claims
- 0995US6881260B2Process for direct deposition of ALD RhO2MICRON TECHNOLOGY INC·Filed 2002·Granted Apr 19, 2005·57 cites·80 claims
- 1095US6656835B2Process for low temperature atomic layer deposition of RhMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 2, 2003·68 cites·37 claims
- 1195US6576778B1Methods for preparing ruthenium and osmium compoundsMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 10, 2003·31 cites·26 claims
- 1294US6319832B1Methods of making semiconductor devicesMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 20, 2001·108 cites·42 claims
- 1393US6114557AMethods for preparing ruthenium and osmium compoundsMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 5, 2000·47 cites·20 claims
- 1492US8741688B2Methods of forming a metal chalcogenide materialQUICK TIMOTHY A·Filed 2012·Granted Jun 3, 2014·10 cites·18 claims
- 1592US6517616B2Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxideMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 11, 2003·47 cites·23 claims
- 1692US6271131B1Methods for forming rhodium-containing layers such as platinum-rhodium barrier layersMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 7, 2001·93 cites·20 claims
- 1791US7572731B2Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including sameMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 11, 2009·14 cites·59 claims
- 1891US6690055B1Devices containing platinum-rhodium layers and methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 10, 2004·38 cites·20 claims
- 1989US6998152B2Chemical vapor deposition methods utilizing ionic liquidsMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 14, 2006·67 cites·25 claims
- 2089US6773495B2Solutions of metal-comprising materialsMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 10, 2004·29 cites·8 claims
- 2188US6844261B2Method of forming ruthenium and ruthenium oxide films on a semiconductor structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 18, 2005·32 cites·27 claims
- 2288US6656839B2Solutions of metal-comprising materials, and methods of making solutions of metal-comprising materialsMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 2, 2003·29 cites·12 claims
- 2388US6495459B2Solutions of metal-comprising materials, methods of forming metal-comprising layers, methods of storing metal-comprising materials, and methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 17, 2002·29 cites·26 claims
- 2488US6306217B1Metal complexes with chelating C-,N-donor ligands for forming metal-containing filmsMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 23, 2001·28 cites·34 claims
- 2587US6444818B2Metal complexes with chelating C-, N-donor ligands for forming metal-containing filmsMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 3, 2002·23 cites·9 claims
- 2686US9006075B2Memory cells, semiconductor devices including such cells, and methods of fabricationQUICK TIMOTHY A·Filed 2011·Granted Apr 14, 2015·4 cites·27 claims
- 2785US9929006B2Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structuresMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 27, 2018·3 cites·18 claims
- 2883US10964532B2Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio featuresMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 30, 2021·2 cites·20 claims
- 2983US6783657B2Systems and methods for the electrolytic removal of metals from substratesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 31, 2004·14 cites·40 claims
- 3083US5925415AElectroless plating of a metal layer on an activated substrateUNIV TOLEDO·Filed 1998·Granted Jul 20, 1999·61 cites·15 claims
- 3180US6214729B1Metal complexes with chelating C-, N-donor ligands for forming metal-containing filmsMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 10, 2001·39 cites·26 claims
- 3278US7837797B2Systems and methods for forming niobium and/or vanadium containing layers using atomic layer depositionMICRON TECHNOLOGY INC·Filed 2009·Granted Nov 23, 2010·4 cites·25 claims
- 3377US6943073B2Process for low temperature atomic layer deposition of RHMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 13, 2005·15 cites·26 claims
- 3475US9496491B2Methods of forming a metal chalcogenide material and related methods of forming a memory cellMARSH EUGENE P·Filed 2012·Granted Nov 15, 2016·2 cites·24 claims
- 3575US7858523B2Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including sameMICRON TECHNOLOGY INC·Filed 2009·Granted Dec 28, 2010·3 cites·25 claims
- 3672US11651955B2Methods of forming silicon nitride including plasma exposureMICRON TECHNOLOGY INC·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 3770US8697486B2Methods of forming phase change materials and methods of forming phase change memory circuitryMARSH EUGENE P·Filed 2009·Granted Apr 15, 2014·0 cites·18 claims
- 3869US7226861B2Methods and apparatus for forming rhodium-containing layersMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 5, 2007·8 cites·28 claims
- 3968US7482037B2Methods for forming niobium and/or vanadium containing layers using atomic layer depositionMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 27, 2009·9 cites·85 claims
- 4068US6872420B2Methods for preparing ruthenium and osmium compounds and filmsMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 29, 2005·3 cites·30 claims
- 4164US11538991B2Methods of forming a memory cell comprising a metal chalcogenide materialMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 27, 2022·0 cites·19 claims
- 4264US10651375B2Memory cells, semiconductor devices including the memory cells, and methods of operationMICRON TECHNOLOGY INC·Filed 2018·Granted May 12, 2020·0 cites·22 claims
- 4364US6352580B1Complexes having tris(pyrazolyl)borate ligands for forming filmsMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 5, 2002·7 cites·27 claims
- 4463US8148580B2Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of telluriumUHLENBROCK STEFAN·Filed 2009·Granted Apr 3, 2012·0 cites·26 claims
- 4562US10283705B2Memory cells, semiconductor devices including the memory cells, and methods of operationMICRON TECHNOLOGY INC·Filed 2018·Granted May 7, 2019·0 cites·20 claims
- 4662US8765519B2Methods of forming phase change materials and methods of forming phase change memory circuitryMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 1, 2014·0 cites·17 claims
- 4759US9029856B2Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structuresMICRON TECHNOLOGY INC·Filed 2014·Granted May 12, 2015·0 cites·19 claims
- 4859US8283503B2Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of telluriumUHLENBROCK STEFAN·Filed 2012·Granted Oct 9, 2012·0 cites·22 claims
- 4958US11152205B2Silicon chalcogenate precursors comprising a chemical formula of si(XR1)nR24-n and methods of forming the silicon chalcogenate precursorsMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 19, 2021·0 cites·23 claims
- 5058US8558032B2Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of telluriumUHLENBROCK STEFAN·Filed 2012·Granted Oct 15, 2013·0 cites·29 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →