Inventor · disambiguated record
Stefan Zollner
Also filed as: ZOLLNER STEFAN
9 granted patents·3 pending applications·153 citations·filing 2007–2014
86Inventor score
Top patents by PatentIndex Score
12 records- 0196US7416605B2Anneal of epitaxial layer in a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 26, 2008·109 cites·26 claims
- 0289US7820530B2Efficient body contact field effect transistor with reduced body resistanceFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 26, 2010·15 cites·20 claims
- 0387US7736957B2Method of making a semiconductor device with embedded stressorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 15, 2010·20 cites·19 claims
- 0475US7687354B2Fabrication of a semiconductor device with stressorFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Mar 30, 2010·6 cites·20 claims
- 0568US8398889B2Electroluminescent adhesive massesKUPSKY MARCO·Filed 2007·Granted Mar 19, 2013·2 cites·20 claims
- 0657US8912626B2eFuse and method of fabricationMACIEJEWSKI EDWARD P·Filed 2011·Granted Dec 16, 2014·1 cites·11 claims
- 0756US8980720B2eFUSE and method of fabricationIBM·Filed 2014·Granted Mar 17, 2015·0 cites·8 claims
- 0847US7560354B2Process of forming an electronic device including a doped semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jul 14, 2009·0 cites·19 claims
- 0943US2008293192A1Semiconductor device with stressors and methods thereofZOLLNER STEFAN·Filed 2007·Application pending·0 cites
- 1040US2009227099A1Method of forming a semiconductor device having a stressed electrode and silicide regionsZOLLNER STEFAN·Filed 2008·Application pending·0 cites
- 1134US8404589B2Silicide contact formationKELLOCK ANDREW J·Filed 2010·Granted Mar 26, 2013·0 cites·13 claims
- 1234US2012028430A1Method and structure to improve formation of silicideCAI MING·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →