Inventor · disambiguated record
Sung-Yool Choi
Also filed as: CHOI SUNG Y · CHOI SUNG-YOOL
21 granted patents·19 pending applications·200 citations·filing 1999–2024
94Inventor score
Files withKOREA ELECTRONICS TELECOMM17KOREA ADVANCED INST SCI & TECH11CHOI SUNG-YOOL3SK HYNIX INC2CHOI CHOON GI1
Top patents by PatentIndex Score
40 records- 0192US6605894B2Field emission devices using carbon nanotubes and method thereofKOREA ELECTRONICS TELECOMM·Filed 2001·Granted Aug 12, 2003·47 cites·9 claims
- 0289US6472802B1Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 1999·Granted Oct 29, 2002·60 cites·11 claims
- 0387US7436033B2Tri-gated molecular field effect transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Oct 14, 2008·12 cites·8 claims
- 0485US6648712B2Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Nov 18, 2003·23 cites·8 claims
- 0575US12314841B2Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic deviceSK HYNIX INC·Filed 2023·Granted May 27, 2025·0 cites·6 claims
- 0675US7960774B2Memory devices including dielectric thin film and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Jun 14, 2011·4 cites·9 claims
- 0772US11024759B2Electronic device using two dimensional semiconductor materialKOREA ADVANCED INST SCI & TECH·Filed 2018·Granted Jun 1, 2021·2 cites·7 claims
- 0872US7413973B2Method for manufacturing nano-gap electrode deviceKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Aug 19, 2008·4 cites·11 claims
- 0971US7537883B2Method of manufacturing nano size-gap electrode deviceKOREA ELECTRONICS TELECOMM·Filed 2006·Granted May 26, 2009·3 cites·11 claims
- 1067US10847577B2Memory and logic device-integrated soft electronic systemKOREA ADVANCED INST SCI & TECH·Filed 2017·Granted Nov 24, 2020·3 cites·6 claims
- 1166US11793006B2Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic deviceSK HYNIX INC·Filed 2021·Granted Oct 17, 2023·0 cites·12 claims
- 1266US6204608B1Field emission display deviceKOREA ELECTRONICS TELECOMM·Filed 1999·Granted Mar 20, 2001·29 cites·10 claims
- 1365US8980721B2Resistive memory device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2012·Granted Mar 17, 2015·1 cites·6 claims
- 1465US7138331B2Method for manufacturing nano-gap electrode deviceKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Nov 21, 2006·10 cites·4 claims
- 1561US2024304637A1Image sensors and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1657US11552267B2Soft memristor for soft neuromorphic systemKOREA ADVANCED INST SCI & TECH·Filed 2020·Granted Jan 10, 2023·0 cites·20 claims
- 1756US11268210B2Method for manufacturing transition metal chalcogenide and transition metal chalcogenide prepared therebyKOREA ADVANCED INST SCI & TECH·Filed 2020·Granted Mar 8, 2022·0 cites·16 claims
- 1854US8890767B2Active metamaterial device and manufacturing method of the sameCHOI CHOON GI·Filed 2012·Granted Nov 18, 2014·2 cites·12 claims
- 1949US2010155684A1Non-volatile memory device and method of forming the sameKOREA ELECTRONICS TELECOMM·Filed 2009·Application pending·0 cites
- 2047US2011212612A1Memory devices including dielectric thin film and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2011·Application pending·0 cites
- 2147US2024258445A1Optical sensor using ferroelectrics and method for manufacturing the sameKOREA ADVANCED INST SCI & TECH·Filed 2020·Application pending·0 cites
- 2246US8344344B2Resistive memory device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2010·Granted Jan 1, 2013·0 cites·11 claims
- 2346US6815567B2Derivatives of 4-sulfanylalkyl-3,5-dinitrobenzyl alcohol and method for preparing the sameKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Nov 9, 2004·0 cites·13 claims
- 2446US2021366707A1Transition metal chalcogenide for preparing metal nanostructures, metal nanostructures obtained thereby, electronic instrument including the same, and method for manufacturing the sameKOREA ADVANCED INST SCI & TECH·Filed 2020·Application pending·0 cites
- 2545US2010065803A1Memory device and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2007·Application pending·0 cites
- 2644US10777639B2Two-dimensional semiconductor, manufacturing method therefor, and semiconductor device comprising sameUNIV KONKUK IND COOP CORP·Filed 2016·Granted Sep 15, 2020·0 cites·14 claims
- 2743US2006131574A1Nanowire sensor and method of manufacturing the sameYU HAN YOUNG·Filed 2005·Application pending·0 cites
- 2843US2006131569A1Organic memory device and method of manufacturing the sameCHOI SUNG Y·Filed 2005·Application pending·0 cites
- 2942US8203140B2Resistive memory device and method for fabricating the sameCHOI SUNG-YOOL·Filed 2010·Granted Jun 19, 2012·0 cites·14 claims
- 3041US2020194595A1Flexible thin-film transistor using two-dimensional semiconductor materialKOREA ADVANCED INST SCI & TECH·Filed 2019·Application pending·0 cites
- 3139US2020203486A1Method for manufacturing doped graphene thin film having mesoporous structure using flash lamp and graphene thin film with mesopore manufactured therebyKOREA ADVANCED INST SCI & TECH·Filed 2019·Application pending·0 cites
- 3238US2013041434A1Pad for thermotheraphyKOREA ELECTRONICS TELECOMM·Filed 2012·Application pending·0 cites
- 3337US2012068161A1Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductorLEE KEON-JAE·Filed 2011·Application pending·0 cites
- 3436US2020194596A1Thin film transistor comprising two dimensional material, display comprising the same and manufacturing method for the sameKOREA ADVANCED INST SCI & TECH·Filed 2018·Application pending·0 cites
- 3536US2020199710A1Method for synthesis of transition metal dichalcogenide alloys using light sources and transition metal dichalcogenide alloys synthesized by the sameKOREA ADVANCED INST SCI & TECH·Filed 2019·Application pending·0 cites
- 3634US2009146136A1Organic memory device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2008·Application pending·0 cites
- 3732US2005135144A1Molecular switching deviceFiled 2004·Application pending·0 cites
- 3831US2012080656A1Graphene oxide memory devices and method of fabricating the sameCHOI SUNG YOOL·Filed 2011·Application pending·0 cites
- 3929US2020181768A1Transition metal dichalcogenide thin film, method for manufacturing the same and display device comprising the sameKOREA ADVANCED INST SCI & TECH·Filed 2018·Application pending·0 cites
- 4028US2007126001A1Organic semiconductor device and method of fabricating the sameCHOI SUNG-YOOL·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →