Inventor · disambiguated record
Sung Woong Chung
Also filed as: CHUNG SUNG WOONG
31 granted patents·12 pending applications·185 citations·filing 2003–2025
96Inventor score
Files withHYNIX SEMICONDUCTOR INC18SK HYNIX INC11CHUNG SUNG WOONG2KIM JOONG SIK2POSTECH RES & BUSINESS DEV FOUND2
Top patents by PatentIndex Score
43 records- 0197US7615449B2Semiconductor device having a recess channel transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Nov 10, 2009·65 cites·25 claims
- 0293US7663188B2Vertical floating body cell of a semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 16, 2010·22 cites·4 claims
- 0391US7459358B2Method for fabricating a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Dec 2, 2008·15 cites·15 claims
- 0487US9147442B2Electronic deviceSK HYNIX INC·Filed 2014·Granted Sep 29, 2015·9 cites·20 claims
- 0585US9331267B2Electronic device having buried gate and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted May 3, 2016·4 cites·15 claims
- 0685US7638838B2Semiconductor device with substantial driving current and decreased junction leakage currentHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 29, 2009·8 cites·10 claims
- 0784US7432162B2Semiconductor device with substantial driving current and decreased junction leakage currentHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Oct 7, 2008·8 cites·25 claims
- 0883US8502186B2Semiconductor memory deviceCHUNG SUNG-WOONG·Filed 2011·Granted Aug 6, 2013·7 cites·17 claims
- 0981US9520187B2Electric device having wire contacts coupled to stack structures with variable resistance elementsSK HYNIX INC·Filed 2015·Granted Dec 13, 2016·5 cites·20 claims
- 1080US8110871B2Semiconductor device with recess and fin structureLEE SANG DON·Filed 2008·Granted Feb 7, 2012·5 cites·11 claims
- 1178US7592210B2Semiconductor device with increased channel area and decreased leakage currentHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Sep 22, 2009·5 cites·26 claims
- 1272US9412444B2Electronic deviceSK HYNIX INC·Filed 2014·Granted Aug 9, 2016·3 cites·7 claims
- 1370US7692251B2Transistor for semiconductor device and method of forming the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Apr 6, 2010·3 cites·18 claims
- 1470US2025273261A1Two-transistor dram cell and method of refreshing two-transistor dram cellPOSTECH RES & BUSINESS DEV FOUND·Filed 2024·Application pending·0 cites
- 1569US10580969B2Electronic deviceSK HYNIX INC·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 1669US6949447B2Method for fabricating isolation layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 27, 2005·15 cites·22 claims
- 1765US8357572B2Method of manufacturing semiconductor device with recess and Fin structure658868 N B INC·Filed 2012·Granted Jan 22, 2013·1 cites·11 claims
- 1865US7960761B2Semiconductor device having a recess channel transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jun 14, 2011·2 cites·3 claims
- 1963US2025091868A1Apparatus and method for producing trifluoramine oxideSK SPECIALTY CO LTD·Filed 2023·Application pending·0 cites
- 2062US7943444B2Vertical floating body cell of a semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Granted May 17, 2011·1 cites·17 claims
- 2161US9406380B2Electronic deviceSK HYNIX INC·Filed 2014·Granted Aug 2, 2016·2 cites·20 claims
- 2260US8159871B2Magnetoresistive memory cell using floating body effect, memory device having the same, and method of operating the memory deviceCHUNG SUNG WOONG·Filed 2009·Granted Apr 17, 2012·2 cites·17 claims
- 2359US7910989B2Semiconductor device with increased channel area and decreased leakage currentHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 22, 2011·0 cites·10 claims
- 2457US11770980B2Electronic deviceSK HYNIX INC·Filed 2020·Granted Sep 26, 2023·0 cites·20 claims
- 2557US7691699B2Transistor for semiconductor device and method of forming the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Apr 6, 2010·1 cites·19 claims
- 2656US2010022057A1Method for forming a semiconductor device having a fin channel transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 2755US2025273262A12t dram cell with asymmetric parasitic capacitor and 2t dram cell arrayPOSTECH RES & BUSINESS DEV FOUND·Filed 2025·Application pending·0 cites
- 2854US8115255B2Method for manufacturing semiconductor deviceKIM JOONG SIK·Filed 2009·Granted Feb 14, 2012·0 cites·8 claims
- 2951US9570511B2Electronic device having buried gate and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Feb 14, 2017·0 cites·9 claims
- 3051US2007252198A1Semiconductor device having a fin channel transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 3150US2010059837A1Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3249US10403345B2Electronic deviceSK HYNIX INC·Filed 2018·Granted Sep 3, 2019·0 cites·17 claims
- 3348US8476707B2Method for manufacturing semiconductor deviceKIM JOONG SIK·Filed 2011·Granted Jul 2, 2013·0 cites·6 claims
- 3446US9892774B2Electronic deviceSK HYNIX INC·Filed 2016·Granted Feb 13, 2018·0 cites·18 claims
- 3546US7727826B2Method for manufacturing a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 1, 2010·0 cites·19 claims
- 3645US2013026437A1Resistance variable memory device and method for fabricating the sameSONG SEOK-PYO·Filed 2011·Application pending·0 cites
- 3745US2011269251A1Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the SameHYNIX SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
- 3844US9923026B2Electronic device including a semiconductor memory having a barrier layerSK HYNIX INC·Filed 2015·Granted Mar 20, 2018·0 cites·19 claims
- 3944US2013026435A1Switching device and resistance change memory device using the sameYI JAE-YUN·Filed 2011·Application pending·0 cites
- 4043US2009273088A1Semiconductor Device and Method for Fabricating the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 4136US8325541B2Non-volatile semiconductor memory apparatusJANG TAE SU·Filed 2008·Granted Dec 4, 2012·0 cites·15 claims
- 4234US2018277745A1Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
- 4334US2013170281A1Variable resistance memory device and method for fabricating the sameSONG SEOK-PYO·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →