Inventor · disambiguated record
Suman Datta
Also filed as: DATTA SUMAN · DOYLE BRIAN S
191 granted patents·63 pending applications·6,713 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
254 records- 0199US7825437B2Unity beta ratio tri-gate transistor static random access memory (SRAM)INTEL CORP·Filed 2007·Granted Nov 2, 2010·166 cites·17 claims
- 0299US7518196B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2005·Granted Apr 14, 2009·72 cites·22 claims
- 0399US7241653B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2005·Granted Jul 10, 2007·125 cites·30 claims
- 0499US6858478B2Tri-gate devices and methods of fabricationINTEL CORP·Filed 2003·Granted Feb 22, 2005·629 cites·3 claims
- 0598US8294180B2CMOS devices with a single work function gate electrode and method of fabricationDOYLE BRIAN S·Filed 2011·Granted Oct 23, 2012·37 cites·14 claims
- 0698US7898041B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2007·Granted Mar 1, 2011·113 cites·20 claims
- 0798US7893506B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2010·Granted Feb 22, 2011·35 cites·10 claims
- 0898US7569443B2Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gateINTEL CORP·Filed 2005·Granted Aug 4, 2009·72 cites·9 claims
- 0998US7569857B2Dual crystal orientation circuit devices on the same substrateINTEL CORP·Filed 2006·Granted Aug 4, 2009·119 cites·4 claims
- 1098US7547637B2Methods for patterning a semiconductor filmINTEL CORP·Filed 2005·Granted Jun 16, 2009·52 cites·8 claims
- 1198US7531393B2Non-planar MOS structure with a strained channel regionINTEL CORP·Filed 2006·Granted May 12, 2009·121 cites·3 claims
- 1298US7485503B2Dielectric interface for group III-V semiconductor deviceINTEL CORP·Filed 2005·Granted Feb 3, 2009·63 cites·13 claims
- 1398US7479421B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyINTEL CORP·Filed 2005·Granted Jan 20, 2009·105 cites·2 claims
- 1498US7449373B2Method of ion implanting for tri-gate devicesINTEL CORP·Filed 2006·Granted Nov 11, 2008·74 cites·19 claims
- 1598US7407847B2Stacked multi-gate transistor design and method of fabricationINTEL CORP·Filed 2006·Granted Aug 5, 2008·99 cites·19 claims
- 1698US7358121B2Tri-gate devices and methods of fabricationINTEL CORP·Filed 2002·Granted Apr 15, 2008·153 cites·15 claims
- 1798US7279375B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2005·Granted Oct 9, 2007·93 cites·12 claims
- 1898US7268058B2Tri-gate transistors and methods to fabricate sameINTEL CORP·Filed 2004·Granted Sep 11, 2007·164 cites·20 claims
- 1998US7193279B2Non-planar MOS structure with a strained channel regionINTEL CORP·Filed 2005·Granted Mar 20, 2007·76 cites·23 claims
- 2098US7170120B2Carbon nanotube energy well (CNEW) field effect transistorINTEL CORP·Filed 2005·Granted Jan 30, 2007·149 cites·15 claims
- 2198US6909151B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2003·Granted Jun 21, 2005·241 cites·31 claims
- 2297US7820513B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationINTEL CORP·Filed 2008·Granted Oct 26, 2010·81 cites·3 claims
- 2397US7525160B2Multigate device with recessed strain regionsINTEL CORP·Filed 2005·Granted Apr 28, 2009·65 cites·14 claims
- 2497US7494862B2Methods for uniform doping of non-planar transistor structuresINTEL CORP·Filed 2006·Granted Feb 24, 2009·70 cites·10 claims
- 2597US7456068B2Forming ultra-shallow junctionsINTEL CORP·Filed 2006·Granted Nov 25, 2008·66 cites·15 claims
- 2697US7456476B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationINTEL CORP·Filed 2003·Granted Nov 25, 2008·222 cites·12 claims
- 2797US7355281B2Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2006·Granted Apr 8, 2008·47 cites·12 claims
- 2897US7348284B2Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flowINTEL CORP·Filed 2004·Granted Mar 25, 2008·141 cites·10 claims
- 2997US7126199B2Multilayer metal gate electrodeINTEL CORP·Filed 2004·Granted Oct 24, 2006·154 cites·5 claims
- 3097US7005366B2Tri-gate devices and methods of fabricationINTEL CORP·Filed 2004·Granted Feb 28, 2006·121 cites·5 claims
- 3197US6974738B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2004·Granted Dec 13, 2005·97 cites·13 claims
- 3296US8129795B2Inducing strain in the channels of metal gate transistorsDATTA SUMAN·Filed 2011·Granted Mar 6, 2012·29 cites·5 claims
- 3396US8071983B2Semiconductor device structures and methods of forming semiconductor structuresBRASK JUSTIN K·Filed 2009·Granted Dec 6, 2011·29 cites·20 claims
- 3496US7902014B2CMOS devices with a single work function gate electrode and method of fabricationINTEL CORP·Filed 2007·Granted Mar 8, 2011·35 cites·7 claims
- 3596US7879675B2Field effect transistor with metal source/drain regionsINTEL CORP·Filed 2008·Granted Feb 1, 2011·36 cites·8 claims
- 3696US7714397B2Tri-gate transistor device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2006·Granted May 11, 2010·24 cites·15 claims
- 3796US7569869B2Transistor having tensile strained channel and system including sameINTEL CORP·Filed 2007·Granted Aug 4, 2009·59 cites·15 claims
- 3896US7514346B2Tri-gate devices and methods of fabricationINTEL CORP·Filed 2005·Granted Apr 7, 2009·28 cites·3 claims
- 3996US7429747B2Sb-based CMOS devicesINTEL CORP·Filed 2006·Granted Sep 30, 2008·39 cites·26 claims
- 4096US7425500B2Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistorsINTEL CORP·Filed 2006·Granted Sep 16, 2008·45 cites·16 claims
- 4196US7355254B2Pinning layer for low resistivity N-type source drain ohmic contactsINTEL CORP·Filed 2006·Granted Apr 8, 2008·50 cites·18 claims
- 4296US7317231B2Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrodeINTEL CORP·Filed 2005·Granted Jan 8, 2008·35 cites·20 claims
- 4396US7153784B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 26, 2006·86 cites·48 claims
- 4496US7148548B2Semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 12, 2006·117 cites·27 claims
- 4596US7138305B2Method and apparatus for improving stability of a 6T CMOS SRAM cellINTEL CORP·Filed 2005·Granted Nov 21, 2006·34 cites·13 claims
- 4696US6970373B2Method and apparatus for improving stability of a 6T CMOS SRAM cellINTEL CORP·Filed 2003·Granted Nov 29, 2005·84 cites·15 claims
- 4795US8421059B2Strain-inducing semiconductor regionsDATTA SUMAN·Filed 2010·Granted Apr 16, 2013·15 cites·5 claims
- 4895US8405164B2Tri-gate transistor device with stress incorporation layer and method of fabricationHARELAND SCOTT A·Filed 2010·Granted Mar 26, 2013·14 cites·5 claims
- 4995US8273626B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationHARELAND SCOTT A·Filed 2010·Granted Sep 25, 2012·28 cites·6 claims
- 5095US8193567B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyKAVALIEROS JACK T·Filed 2008·Granted Jun 5, 2012·33 cites·4 claims
Showing the top 50 of 254 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →