Inventor · disambiguated record
Sunil Hattangady
Also filed as: HATTANGADY SUNIL · HATTANGADY SUNIL V
21 granted patents·6 pending applications·1,016 citations·filing 1990–2004
97Inventor score
Top patents by PatentIndex Score
27 records- 0197US6136654AMethod of forming thin silicon nitride or silicon oxynitride gate dielectricsTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 24, 2000·207 cites·21 claims
- 0294US6110842AMethod of forming multiple gate oxide thicknesses using high density plasma nitridationTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 29, 2000·132 cites·15 claims
- 0393US6610614B2Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gatesTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 26, 2003·67 cites·18 claims
- 0490US6632747B2Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profileTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 14, 2003·51 cites·11 claims
- 0589US6251761B1Process for polycrystalline silicon gates and high-K dielectric compatibilityTEXAS INSTRUMENTS INC·Filed 1999·Granted Jun 26, 2001·85 cites·19 claims
- 0686US6716695B1Semiconductor with a nitrided silicon gate oxide and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 6, 2004·35 cites·15 claims
- 0783US5989962ASemiconductor device having dual gate and method of formationTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 23, 1999·56 cites·12 claims
- 0877US6399445B1Fabrication technique for controlled incorporation of nitrogen in gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Jun 4, 2002·51 cites·20 claims
- 0976US6268296B1Low temperature process for multiple voltage devicesTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 31, 2001·48 cites·27 claims
- 1076US6140024ARemote plasma nitridation for contact etch stopTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 31, 2000·50 cites·22 claims
- 1176US5970345AMethod of forming an integrated circuit having both low voltage and high voltage MOS transistorsTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 19, 1999·38 cites·9 claims
- 1275US6331492B2Nitridation for split gate multiple voltage devicesTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 18, 2001·48 cites·25 claims
- 1372US6261973B1Remote plasma nitridation to allow selectively etching of oxideTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 17, 2001·41 cites·21 claims
- 1471US6956267B2Semiconductor with a nitrided silicon gate oxide and methodTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 18, 2005·14 cites·4 claims
- 1570US6780719B2Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixturesTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 24, 2004·13 cites·12 claims
- 1667US6323114B1Stacked/composite gate dielectric which incorporates nitrogen at an interfaceTEXAS INSTRUMENTS INC·Filed 1999·Granted Nov 27, 2001·38 cites·15 claims
- 1759US6420729B2Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectricsTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 16, 2002·6 cites·8 claims
- 1854US6277681B1Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectricsTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 21, 2001·18 cites·13 claims
- 1951US6423648B2Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agentTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 23, 2002·3 cites·14 claims
- 2047US5168330ASemiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayerRES TRIANGLE INST·Filed 1990·Granted Dec 1, 1992·11 cites·5 claims
- 2139US2003157773A1Semiconductor device having a dielectric layer with a uniform nitrogen profileFiled 2003·Application pending·0 cites
- 2237US2003080389A1Semiconductor device having a dielectric layer with a uniform nitrogen profileFiled 2001·Application pending·0 cites
- 2337US2003143813A1Semiconductor device and methodTEXAS INSTRUMENTS INC·Filed 2002·Application pending·0 cites
- 2435US2002098712A1Multi-thickness oxide growth with in-situ scanned laser heatingFiled 2001·Application pending·0 cites
- 2534US2002025626A1Integrated dielectric and methodFiled 2001·Application pending·0 cites
- 2633US6352941B1Controllable oxidation technique for high quality ultrathin gate oxide formationTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 5, 2002·4 cites·21 claims
- 2731US2003173615A1Flash memory array integrally formed with another device and method of manufacture thereforFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →