Inventor · disambiguated record
Suk Kyoung Hong
Also filed as: HONG SUK K · HONG SUK KYOUNG
54 granted patents·14 pending applications·523 citations·filing 1999–2012
98Inventor score
Files withHYNIX SEMICONDUCTOR INC41KANG HEE-BOK14HYUNDAI ELECTRONICS IND6CHANG HEON YONG4CHANG HEON Y3
Top patents by PatentIndex Score
68 records- 0198US7332370B2Method of manufacturing a phase change RAM device utilizing reduced phase change currentHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 19, 2008·167 cites·9 claims
- 0295US7701751B2One-transistor type DRAMHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Apr 20, 2010·38 cites·9 claims
- 0389US8258958B2Dual antenna RFID tagKANG HEE BOK·Filed 2009·Granted Sep 4, 2012·19 cites·28 claims
- 0489US8164941B2Semiconductor memory device with ferroelectric device and refresh method thereofKANG HEE BOK·Filed 2007·Granted Apr 24, 2012·18 cites·8 claims
- 0588US7961534B2Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereofHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 14, 2011·16 cites·12 claims
- 0685US6642100B2Semiconductor device with capacitor structure having hydrogen barrier layer and method for the manufacture thereofHYUNDAI ELECTRONICS IND·Filed 2001·Granted Nov 4, 2003·38 cites·11 claims
- 0783US7630262B2One-transistor type dramHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 8, 2009·13 cites·11 claims
- 0882US7667219B2Reduced current phase-change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 23, 2010·11 cites·8 claims
- 0981US7920064B2Radio frequency identification tag capable of storing and restoring flag dataHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Apr 5, 2011·9 cites·20 claims
- 1081US7663910B2Phase change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Feb 16, 2010·11 cites·17 claims
- 1179US7751233B2Method for efficiently driving a phase change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jul 6, 2010·9 cites·20 claims
- 1278US8243505B2Phase change memory device having write driving control signal corresponding to set/reset write timeKANG HEE BOK·Filed 2008·Granted Aug 14, 2012·10 cites·24 claims
- 1377US8315089B2Phase change memory device with improved performance that minimizes cell degradationKANG HEE BOK·Filed 2011·Granted Nov 20, 2012·5 cites·20 claims
- 1477US7969794B2One-transistor type DRAMHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jun 28, 2011·5 cites·12 claims
- 1573US7733718B2One-transistor type DRAMHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 8, 2010·4 cites·12 claims
- 1673US7668031B2Semiconductor memory device with ferroelectric deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 23, 2010·5 cites·23 claims
- 1771US7852659B2Time efficient phase change memory data storage deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 14, 2010·7 cites·15 claims
- 1871US7791935B2Method for driving a phase change memory device using various write conditionsHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 7, 2010·7 cites·23 claims
- 1971US7688622B2Phase change memory device with dummy cell arrayHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 30, 2010·7 cites·19 claims
- 2070US7791934B2Method for driving multi-level data to a phase change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 7, 2010·7 cites·29 claims
- 2169US8000132B2Method for efficiently driving a phase change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Aug 16, 2011·3 cites·20 claims
- 2269US6645779B2FeRAM (ferroelectric random access memory) and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 11, 2003·15 cites·12 claims
- 2368US7929339B2Phase change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Apr 19, 2011·5 cites·8 claims
- 2468US7799596B2Phase change memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Sep 21, 2010·3 cites·2 claims
- 2567US8243504B2Phase change memory device with reference cell arrayKANG HEE BOK·Filed 2008·Granted Aug 14, 2012·6 cites·21 claims
- 2667US8217779B2Radio frequency identification deviceKANG HEE BOK·Filed 2008·Granted Jul 10, 2012·3 cites·23 claims
- 2765US7643336B2Phase change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jan 5, 2010·5 cites·20 claims
- 2864US7851776B2Phase change RAM deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Dec 14, 2010·2 cites·4 claims
- 2964US7332434B2Semiconductor device having diffusion barrier layer containing chrome and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 19, 2008·1 cites·9 claims
- 3063US6417101B2Method for manufacturing semiconductor memory device incorporating therein copacitorHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jul 9, 2002·11 cites·9 claims
- 3162US8605496B2Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereofKANG HEE BOK·Filed 2011·Granted Dec 10, 2013·2 cites·10 claims
- 3262US7643326B2Semiconductor memory device with ferroelectric deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jan 5, 2010·4 cites·20 claims
- 3362US6849468B2Method for manufacturing ferroelectric random access memory capacitorHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Feb 1, 2005·8 cites·14 claims
- 3461US8014187B2Method for driving phase change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 6, 2011·4 cites·18 claims
- 3561US7688646B2Non-volatile latch circuit for restoring data after power interruptionHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 30, 2010·4 cites·23 claims
- 3660US8319642B2Radio frequency identification device having nonvolatile ferroelectric memoryKANG HEE BOK·Filed 2008·Granted Nov 27, 2012·1 cites·23 claims
- 3758US7738288B2Phase change memory device having a plurality of reference currents and operating method thereofHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 15, 2010·3 cites·21 claims
- 3858US7719905B2Semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 18, 2010·3 cites·24 claims
- 3958US6927121B2Method for manufacturing ferroelectric random access memory capacitorHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Aug 9, 2005·6 cites·12 claims
- 4057US7768823B2Phase change memory device and operating method thereofHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 3, 2010·3 cites·23 claims
- 4154US7939365B2Phase change memory device, manufacturing method thereof and operating method thereofHYNIX SEMICONDUCTOR INC·Filed 2008·Granted May 10, 2011·2 cites·8 claims
- 4254US7864611B2One-transistor type DRAMHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 4, 2011·2 cites·14 claims
- 4353US8450772B2Phase change RAM device and method for manufacturing the sameCHANG HEON YONG·Filed 2009·Granted May 28, 2013·0 cites·5 claims
- 4452US8189373B2Phase change memory device using a multiple level write voltageKANG HEE BOK·Filed 2008·Granted May 29, 2012·2 cites·21 claims
- 4552US7944739B2Phase change memory device with bit line discharge pathHYNIX SEMICONDUCTOR INC·Filed 2008·Granted May 17, 2011·2 cites·10 claims
- 4651US8274369B2Radio frequency identification device having nonvolatile ferroelectric memoryKANG HEE BOK·Filed 2008·Granted Sep 25, 2012·2 cites·22 claims
- 4750US7105885B2Semiconductor device having diffusion barrier layer containing chrome and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 12, 2006·2 cites·4 claims
- 4848US8194440B2Phase change memory device having multiple reset signals and operating method thereofKANG HEE BOK·Filed 2008·Granted Jun 5, 2012·1 cites·20 claims
- 4948US2006278899A1Phase change RAM device and method for manufacturing the sameCHANG HEON Y·Filed 2006·Application pending·0 cites
- 5048US2006284159A1Phase change memory device and method for manufacturing the sameCHANG HEON Y·Filed 2006·Application pending·0 cites
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →