Inventor · disambiguated record
Sug-Hun Hong
Also filed as: HONG SUG-HUN
22 granted patents·3 pending applications·375 citations·filing 1997–2016
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD17NA HOON-JOO2LEE HYE-LAN1PARK HONG-BAE1SAMSUNG ELECTRONICS CO INC1
Top patents by PatentIndex Score
25 records- 0190US8513740B2Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the samePARK HONG-BAE·Filed 2010·Granted Aug 20, 2013·18 cites·19 claims
- 0290US6383877B1Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 7, 2002·49 cites·10 claims
- 0386US8293599B2Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materialsNA HOON-JOO·Filed 2009·Granted Oct 23, 2012·12 cites·18 claims
- 0486US7972950B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·10 claims
- 0584US6624496B2Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 23, 2003·29 cites·6 claims
- 0684US6255194B1Trench isolation methodSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 3, 2001·66 cites·26 claims
- 0784US6037237ATrench isolation methods utilizing composite oxide filmsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 14, 2000·74 cites·15 claims
- 0882US6501149B2Semiconductor device having trench isolation structure and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 31, 2002·29 cites·11 claims
- 0979US9287199B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceLEE HYE-LAN·Filed 2010·Granted Mar 15, 2016·6 cites·26 claims
- 1075US9543300B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 10, 2017·2 cites·30 claims
- 1170US7692196B2Memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·4 cites·18 claims
- 1269US9236313B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·1 cites·16 claims
- 1369US6930062B2Methods of forming an oxide layer in a transistor having a recessed gateSAMSUNG ELECTRONICS CO INC·Filed 2004·Granted Aug 16, 2005·12 cites·9 claims
- 1468US7053006B2Methods of fabricating oxide layers by plasma nitridation and oxidationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 30, 2006·11 cites·15 claims
- 1567US6642596B2Semiconductor device having trench isolation structure and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 4, 2003·12 cites·21 claims
- 1658US7319062B2Trench isolation method with an epitaxially grown capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 15, 2008·7 cites·2 claims
- 1755US8367502B2Method of manufacturing dual gate semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 5, 2013·1 cites·14 claims
- 1855US5926721AIsolation method for semiconductor device using selective epitaxial growthSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 20, 1999·19 cites·18 claims
- 1951US8932922B2Method of fabricating semiconductor device having dual gateNA HOON-JOO·Filed 2011·Granted Jan 13, 2015·0 cites·12 claims
- 2049US5903040ATrench isolated integrated circuits including voidsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted May 11, 1999·15 cites·9 claims
- 2147US7910421B2Methods of forming devices including different gate insulating layers on PMOS/NMOS regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 22, 2011·0 cites·20 claims
- 2247US2006183296A1Isolation method for semiconductor deviceYOO JAE-YOON·Filed 2006·Application pending·0 cites
- 2345US7696563B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·0 cites·16 claims
- 2439US2002197823A1Isolation method for semiconductor deviceFiled 2002·Application pending·0 cites
- 2538US2004005748A1Methods of forming a gate insulating layer in an integrated circuit device in which the gate insulating layer is nitrified and then annealed to cure defects caused by the nitridation processFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →