Inventor · disambiguated record
Sun-Hwan Hwang
Also filed as: HWANG SUN H · HWANG SUN HWAN
23 granted patents·6 pending applications·44 citations·filing 2004–2024
93Inventor score
Top patents by PatentIndex Score
29 records- 0190US10559569B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2017·Granted Feb 11, 2020·6 cites·20 claims
- 0288US10518250B2Ferrite-based catalyst composite, method of preparing the same, and method of preparing butadiene using the sameLG CHEMICAL LTD·Filed 2017·Granted Dec 31, 2019·3 cites·6 claims
- 0381US10888844B2Catalyst for oxidative dehydrogenation, method of preparing catalyst, and method of performing oxidative dehydrogenation using catalystLG CHEMICAL LTD·Filed 2018·Granted Jan 12, 2021·1 cites·7 claims
- 0480US10008642B2Semiconductor light emitting devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·4 cites·14 claims
- 0579US8309448B2Method for forming buried word line in semiconductor deviceHWANG SUN-HWAN·Filed 2009·Granted Nov 13, 2012·10 cites·7 claims
- 0676US8048743B2Method for fabricating vertical channel type nonvolatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 1, 2011·3 cites·16 claims
- 0772US11660584B2Catalyst for oxidative dehydrogenation, method of preparing catalyst, and method of performing oxidative dehydrogenation using catalystLG CHEMICAL LTD·Filed 2020·Granted May 30, 2023·0 cites·9 claims
- 0871US7919373B2Method for doping polysilicon and method for fabricating a dual poly gate using the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Apr 5, 2011·3 cites·30 claims
- 0970US7902628B2Semiconductor device with trench isolation structureHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 8, 2011·4 cites·4 claims
- 1069US8399323B2Method for fabricating vertical channel type nonvolatile memory deviceLEE KI-HONG·Filed 2011·Granted Mar 19, 2013·1 cites·10 claims
- 1168US8580678B2Method for fabricating semiconductor device with buried gatesHWANG SUN-HWAN·Filed 2011·Granted Nov 12, 2013·2 cites·14 claims
- 1264US9871045B2Semiconductor device with damascene bit line and method for manufacturing the sameYEOM SEUNG-JIN·Filed 2011·Granted Jan 16, 2018·2 cites·19 claims
- 1363US11462545B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2020·Granted Oct 4, 2022·0 cites·5 claims
- 1462US2025318241A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1555US10843173B2Ferrite catalyst for oxidative dehydrogenation, method of preparing ferrite catalyst, and method of preparing butadiene using ferrite catalystLG CHEMICAL LTD·Filed 2018·Granted Nov 24, 2020·0 cites·13 claims
- 1655US2013137228A1Method for fabricating vertical channel type nonvolatile memory deviceSK HYNIX INC·Filed 2013·Application pending·0 cites
- 1755US2013130454A1Method for fabricating vertical channel type nonvolatile memory deviceSK HYNIX INC·Filed 2013·Application pending·0 cites
- 1853US7528052B2Method for fabricating semiconductor device with trench isolation structureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 5, 2009·5 cites·12 claims
- 1951US11247195B2Method of preparing catalyst for oxidative dehydrogenation and method of performing oxidative dehydrogenation using catalystLG CHEMICAL LTD·Filed 2018·Granted Feb 15, 2022·0 cites·10 claims
- 2050US10994262B2Catalyst for oxidative dehydrogenation and method of preparing the sameLG CHEMICAL LTD·Filed 2017·Granted May 4, 2021·0 cites·11 claims
- 2150US10543478B2Catalyst for oxidative dehydrogenation and method of preparing the sameLG CHEMICAL LTD·Filed 2017·Granted Jan 28, 2020·0 cites·8 claims
- 2248US10486150B2Catalyst for oxidative dehydrogenation and method of preparing the sameLG CHEMICAL LTD·Filed 2016·Granted Nov 26, 2019·0 cites·13 claims
- 2347US10926246B2Method of preparing catalyst for oxidative dehydrogenationLG CHEMICAL LTD·Filed 2017·Granted Feb 23, 2021·0 cites·7 claims
- 2446US2010099243A1Method for forming diode in phase change random access memory deviceHWANG SUN HWAN·Filed 2009·Application pending·0 cites
- 2544US7888245B2Plasma doping method and method for fabricating semiconductor device using the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 15, 2011·0 cites·14 claims
- 2643US10343958B2Catalyst for coating surface of porous material and method of treating surface of porous materialLG CHEMICAL LTD·Filed 2017·Granted Jul 9, 2019·0 cites·9 claims
- 2742US2009163013A1Method for Forming Gate of Non-Volatile Memory DeviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 2838US2006264013A1Method for implanting ions to a wafer for manufacturing of semiconductor device and method of fabricating graded junction using the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 2933US9878961B2Nickel-M-alumina xerogel catalyst, method for preparing the same, and method for preparing methane using the catalystLIM HYO JUN·Filed 2011·Granted Jan 30, 2018·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →