Inventor · disambiguated record
Sug-Woo Jung
Also filed as: JUNG SUG WOO
27 granted patents·15 pending applications·527 citations·filing 2004–2025
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD20SAMSUNG DISPLAY CO LTD16JUNG SUG-WOO2OH GYU-HWAN2PARK YOUNG-LIM1
Top patents by PatentIndex Score
42 records- 0198US7432185B2Method of forming semiconductor device having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 7, 2008·183 cites·4 claims
- 0298US7381989B2Semiconductor device including upper and lower transistors and interconnection between upper and lower transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 3, 2008·182 cites·23 claims
- 0396US7687331B2Stacked semiconductor device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 30, 2010·54 cites·9 claims
- 0486US7084061B2Methods of fabricating a semiconductor device having MOS transistor with strained channelSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·36 cites·27 claims
- 0585US10026890B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·6 cites·22 claims
- 0684US8237149B2Non-volatile memory device having bottom electrodeOH GYU-HWAN·Filed 2011·Granted Aug 7, 2012·9 cites·20 claims
- 0783US10062843B2Variable resistive memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 28, 2018·3 cites·14 claims
- 0881US7435634B2Methods of forming semiconductor devices having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·8 cites·28 claims
- 0981US7214620B2Methods of forming silicide films with metal films in semiconductor devices and contacts including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·26 cites·20 claims
- 1076US7833847B2Method of forming semiconductor device having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 16, 2010·5 cites·7 claims
- 1175US12218142B2Display deviceSAMSUNG DISPLAY CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·16 claims
- 1272US12185602B2Display deviceSAMSUNG DISPLAY CO LTD·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
- 1370US2025297357A1Deposition mask and method of manufacturing the sameSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 1470US2025142972A1Display deviceSAMSUNG DISPLAY CO LTD·Filed 2025·Application pending·0 cites
- 1569US7936024B2Semiconductor devices having stacked structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 3, 2011·3 cites·18 claims
- 1669US2025223683A1Deposition mask, deposition equipment including deposition mask, method of manufacturing display device using deposition equipment, and display device manufactured by method thereofSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 1767US11937476B2Display deviceSAMSUNG DISPLAY CO LTD·Filed 2023·Granted Mar 19, 2024·0 cites·20 claims
- 1867US11817458B2Display deviceSAMSUNG DISPLAY CO LTD·Filed 2020·Granted Nov 14, 2023·0 cites·20 claims
- 1967US2025075305A1Method for manufacturing deposition maskSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 2066US2025275364A1Display device, method for fabrication thereof, and head mounted display deviceSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 2163US7238612B2Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 3, 2007·2 cites·21 claims
- 2263US2025241150A1Display device, method for fabrication thereof, and head mounted display deviceSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 2363US2025048907A1Display deviceSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 2462US11367768B2Display deviceSAMSUNG DISPLAY CO LTD·Filed 2021·Granted Jun 21, 2022·0 cites·20 claims
- 2562US2024407245A1Deposition mask, method for manufacturing the same, and display device manufactured using the sameSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 2661US7232756B2Nickel salicide process with reduced dopant deactivationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 19, 2007·9 cites·38 claims
- 2761US2025059637A1Deposition maskSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 2859US8841643B2Semiconductor memory device including buffer electrodeOH GYU-HWAN·Filed 2011·Granted Sep 23, 2014·1 cites·20 claims
- 2958US2024372045A1Display deviceSAMSUNG DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 3055US10305037B2Variable resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 28, 2019·0 cites·15 claims
- 3154US7579225B2Method of forming semiconductor device having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 25, 2009·0 cites·9 claims
- 3253US11610957B2Display deviceSAMSUNG DISPLAY CO LTD·Filed 2021·Granted Mar 21, 2023·0 cites·18 claims
- 3350US7531459B2Methods of forming self-aligned silicide layers using multiple thermal processesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·0 cites·22 claims
- 3449US7666786B2Methods of fabricating semiconductor devices having a double metal salicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 23, 2010·0 cites·12 claims
- 3548US10249816B2Magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 2, 2019·0 cites·8 claims
- 3648US2012149166A1METHOD OF FORMING TITANIUM NITRADE (TiN) FILM, NONVOLATILE MEMORY DEVICE USING THE TiN FILM, AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICEPARK YOUNG-LIM·Filed 2011·Application pending·0 cites
- 3744US7662707B2Method of forming relatively continuous silicide layers for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 16, 2010·0 cites·24 claims
- 3842US2006160361A1Nickel salicide process and method of fabricating a semiconductor device using the sameJUNG SUG-WOO·Filed 2005·Application pending·0 cites
- 3939US2006199343A1Method of forming MOS transistor having fully silicided metal gate electrodeJUNG SUG-WOO·Filed 2006·Application pending·0 cites
- 4038US7569483B2Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 4, 2009·0 cites·12 claims
- 4138US2006003534A1Salicide process using bi-metal layer and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4236US2006223296A1Semiconductor device having self-aligned silicide layer and method thereofSUN MIN-CHUL·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →