Inventor · disambiguated record
Sudarat Lee
Also filed as: LEE SUDARAT
13 granted patents·36 pending applications·3 citations·filing 2020–2024
82Inventor score
Top patents by PatentIndex Score
49 records- 0185US12394716B2Integrated circuit interconnect structures with graphene capINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 0284US12396254B2Stacked 2D CMOS with inter metal layersINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 0381US12396217B2Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabricationINTEL CORP·Filed 2020·Granted Aug 19, 2025·1 cites·13 claims
- 0480US12278289B2TMD inverted nanowire integrationINTEL CORP·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 0572US2025133822A1Ribbon or wire transistor stack with selective dipole threshold voltage shifterINTEL CORP·Filed 2024·Application pending·0 cites
- 0666US11935956B2TMD inverted nanowire integrationINTEL CORP·Filed 2020·Granted Mar 19, 2024·0 cites·20 claims
- 0761US2025385047A1Composite insulator films with low electrical leakage & high charge capacitanceINTEL CORP·Filed 2024·Application pending·0 cites
- 0860US12369382B2Integrated circuit structures with graphene contactsINTEL CORP·Filed 2021·Granted Jul 22, 2025·0 cites·25 claims
- 0959US12183739B2Ribbon or wire transistor stack with selective dipole threshold voltage shifterINTEL CORP·Filed 2020·Granted Dec 31, 2024·0 cites·21 claims
- 1056US12432976B2Thin film transistors having strain-inducing structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Sep 30, 2025·0 cites·10 claims
- 1156US12266720B2Transistors with monocrystalline metal chalcogenide channel materialsINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·12 claims
- 1256US2023411443A1Metal insulator metal (mim) capacitor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 1355US12437929B2Capacitor with an electrically conductive layer coupled with a metal layer of the capacitorINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·24 claims
- 1455US12176388B2Transition metal dichalcogenide nanowires and methods of fabricationINTEL CORP·Filed 2020·Granted Dec 24, 2024·0 cites·20 claims
- 1554US2024222441A1Selective gate oxide formation on 2d material based transistor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 1654US2023411278A1Metal insulator metal (mim) capacitor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 1753US12266712B2Transition metal dichalcogenide nanosheet transistors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·19 claims
- 1853US2023420511A1Stacked single crystal transition-metal dichalcogenide using seeded growthINTEL CORP·Filed 2022·Application pending·0 cites
- 1953US2025006841A1Technologies for barrier layers in perovskite transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 2052US2023420510A1Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channelsINTEL CORP·Filed 2022·Application pending·0 cites
- 2152US2024222461A1Beol contact metals for 2d transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 2252US2024222483A12d nanoribbons utilizing silicon scaffoldingINTEL CORP·Filed 2022·Application pending·0 cites
- 2351US2024222482A1Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel regionINTEL CORP·Filed 2022·Application pending·0 cites
- 2451US2024006521A1Back-end-of-line 2d transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 2551US2024222113A1Passivation of crystalline substrate for metal chalcogen material synthesisINTEL CORP·Filed 2022·Application pending·0 cites
- 2651US2024120415A1Technologies for atomic layer deposition for ferroelectric transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 2751US2023197860A1Metal chalcogenide transistors with defected channel transition layerINTEL CORP·Filed 2021·Application pending·0 cites
- 2851US2024113220A1Technologies for transistors with a thin-film ferroelectricINTEL CORP·Filed 2022·Application pending·0 cites
- 2951US2024006484A1Contact architecture for 2d stacked nanoribbon transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 3050US2024222428A1Seeded growth for 2d nanoribbon transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3150US2023317783A1Layered 2d semiconductorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3250US2023420364A1Microelectronic die with two dimensional (2d) complementary metal oxide semiconductor devices in an interconnect stack thereofINTEL CORP·Filed 2022·Application pending·0 cites
- 3349US2024006481A1Alternating sacrificial layer materials for mechanically stable 2d nanoribbon etchINTEL CORP·Filed 2022·Application pending·0 cites
- 3449US2023096347A1Cmos integration of 2d material by end etchINTEL CORP·Filed 2021·Application pending·0 cites
- 3549US2023411390A1Two-dimensional pmos devices for providing cmos in back-end layers of integrated circuit devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 3649US2023088101A1Thin film transistors having edge-modulated 2d channel materialINTEL CORP·Filed 2021·Application pending·0 cites
- 3748US12125895B2Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabricationINTEL CORP·Filed 2020·Granted Oct 22, 2024·0 cites·20 claims
- 3848US2023086499A1Thin film transistors having fin structures integrated with 2d channel materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 3948US2023098467A1Thin film transistors having a spin-on 2d channel materialINTEL CORP·Filed 2021·Application pending·0 cites
- 4048US2023113614A1Thin film transistors having cmos functionality integrated with 2d channel materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4148US2022199760A1Integrated circuit device having backend double-walled capacitorsINTEL CORP·Filed 2020·Application pending·0 cites
- 4248US2023197728A1Stacked transistor structures with diverse gate materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4347US2023253444A1Capacitor devices with strontium titanate insulator layersINTEL CORP·Filed 2022·Application pending·0 cites
- 4447US2023100713A1Integrated circuit structures with improved two-dimensional channel architectureINTEL CORP·Filed 2021·Application pending·0 cites
- 4547US2023101370A1Thin film transistors having multi-layer gate dielectric structures integrated with 2d channel materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4646US2022199799A1Thin film transistors having boron nitride integrated with 2d channel materialsINTEL CORP·Filed 2020·Application pending·0 cites
- 4745US2022149192A1Thin film transistors having electrostatic double gatesINTEL CORP·Filed 2020·Application pending·0 cites
- 4845US2023097898A1Transistor structure with a monolayer edge contactINTEL CORPRATION·Filed 2021·Application pending·0 cites
- 4940US2022059668A1Rare-earth materials for integrated circuit structuresINTEL CORP·Filed 2020·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Sudarat Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →