Inventor · disambiguated record
Sung-En Lin
Also filed as: LIN SUNG-EN
25 granted patents·40 pending applications·20 citations·filing 2006–2025
93Inventor score
Top patents by PatentIndex Score
65 records- 0195US11888049B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0294US11437245B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·20 claims
- 0393US12113113B2Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·2 cites·20 claims
- 0489US11195717B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 0586US2025349542A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0684US2025311265A1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0783US12349381B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 0882US12501690B2Hardmask formation with hybrid materials in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 0982US2025366242A1Isolation structures in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1081US12094784B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 1181US2025359265A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1281US2025359132A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1380US12266529B2Patterning semiconductor devices and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 1480US10734227B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·2 cites·20 claims
- 1580US10468409B2FinFET device with oxidation-resist STI liner structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·3 cites·20 claims
- 1680US2025344545A1Back-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1779US2024363349A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1879US2025359248A1Sti protection layer formation through implantation and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1979US2024387285A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2078US2025331252A1Treating the dielectric films under the bottoms of source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2178US2025344428A1Selective bottom seed layer formation for bottom-up epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2278US2025359205A1Isolation Structure For TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2377US10361112B2High aspect ratio gap fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·2 cites·20 claims
- 2477US2025336713A1Deposition Method for Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2577US2024379359A1Patterning Semiconductor Devices and Structures Resulting TherefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2677US2025351480A1Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2776US12002719B2Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 2876US2024274476A1Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2976US2025359246A1Sti protection layer formation through implantation and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3075US2025359103A1Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3175US2025056851A1Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3274US11810824B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 3374US11532733B1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 3473US12080553B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 3573US2025203969A1Treating the Dielectric Films Under the Bottoms of Source/Drain RegionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3673US2024371959A1Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3772US11948843B2Method for forming hardmask formation by hybrid materials in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 3871US11557518B2Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 3971US2024429313A1Selective bottom seed layer formation for bottom-up epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4071US2025359101A1Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4170US11848209B2Patterning semiconductor devices and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 4270US2025048711A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4370US2025081507A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4468US2024079265A1Deposition Method for Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4567US2023317758A1Isolation structures in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4666US12166076B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 4766US11854819B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4863US2023154984A1Transistor Isolation Regions and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4960US7612005B2Cerium-based oxide fiber and its fabricating methodUNIV NAT TAIWAN·Filed 2006·Granted Nov 3, 2009·2 cites·13 claims
- 5060US2025280580A1Semiconductor seed layer on source/drain dielectric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →