Inventor · disambiguated record
Sudipto Naskar
Also filed as: NASKAR SUDIPTO
15 granted patents·31 pending applications·11 citations·filing 2016–2024
87Inventor score
Files withINTEL CORP46
Top patents by PatentIndex Score
46 records- 0196US11264449B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2020·Granted Mar 1, 2022·5 cites·20 claims
- 0282US12342551B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 0379US12176408B2Localized spacer for nanowire transistors and methods of fabricationINTEL CORP·Filed 2020·Granted Dec 24, 2024·1 cites·15 claims
- 0479US11239112B2Passivating silicide-based approaches for conductive via fabrication and structures resulting therefromINTEL CORP·Filed 2017·Granted Feb 1, 2022·3 cites·25 claims
- 0576US11894368B2Gate-all-around integrated circuit structures fabricated using alternate etch selective materialINTEL CORP·Filed 2019·Granted Feb 6, 2024·1 cites·16 claims
- 0674US11791375B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 0773US11901404B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2022·Granted Feb 13, 2024·0 cites·17 claims
- 0873US2024120335A1Gate-all-around integrated circuit structures fabricated using alternate etch selective materialINTEL CORP·Filed 2023·Application pending·0 cites
- 0968US11894270B2Grating replication using helmets and topographically-selective depositionINTEL CORP·Filed 2022·Granted Feb 6, 2024·0 cites·8 claims
- 1068US10546772B2Self-aligned via below subtractively patterned interconnectINTEL CORP·Filed 2016·Granted Jan 28, 2020·1 cites·20 claims
- 1163US2025393189A1Capacitors with amorphous oxide layer for high capacitance and low leakageINTEL CORP·Filed 2024·Application pending·0 cites
- 1258US2025261408A1Layered thin film materials for transistor channelsINTEL CORP·Filed 2024·Application pending·0 cites
- 1358US2025374619A1Gated subfin reduction techniques in nanoribbon-based transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 1458US2025113581A1Trench contact structure with airgap spacerINTEL CORP·Filed 2023·Application pending·0 cites
- 1557US2025218868A1Self-aligned interconnect features with floating dielectric structureINTEL CORP·Filed 2023·Application pending·0 cites
- 1657US2025220986A1Airgap spacer wrapped around a contactINTEL CORP·Filed 2023·Application pending·0 cites
- 1757US2025210411A1Interconnect layers with air gapsINTEL CORP·Filed 2023·Application pending·0 cites
- 1856US2025112037A1Selective dielectric growth for directing contact to gate or contact to trench contactINTEL CORP·Filed 2023·Application pending·0 cites
- 1956US2024324167A1Architectures and methods for computation in memory (cim) with backside memory using high performance (hp) thin film transistor (tft) materialINTEL CORP·Filed 2023·Application pending·0 cites
- 2056US2025267909A1Integrated circuit structure with direct backside source or drain contact enabled by silicon germanium etch stopINTEL CORP·Filed 2024·Application pending·0 cites
- 2156US2025212464A1Bilayer cavity spacer for gate-all-around transistorINTEL CORP·Filed 2023·Application pending·0 cites
- 2256US2025311403A1Integrated circuit structures having contacts to a gate electrode or a conductive trench contact of an architecture including uniform grid metal gate and trench contact cutsINTEL CORP·Filed 2024·Application pending·0 cites
- 2355US12369399B2Gate-to-gate isolation for stacked transistor architecture via selective dielectric deposition structureINTEL CORP·Filed 2021·Granted Jul 22, 2025·0 cites·20 claims
- 2455US11335598B2Grating replication using helmets and topographically-selective depositionINTEL CORP·Filed 2018·Granted May 17, 2022·0 cites·10 claims
- 2554US2025098242A1Air gap insulation in place of gate spacersINTEL CORP·Filed 2023·Application pending·0 cites
- 2654US2024312986A1Integrated circuit structures having self-aligned uniform grid metal gate and trench contact plug for tub gatesINTEL CORP·Filed 2023·Application pending·0 cites
- 2754US2025220944A1Method of controlling metal gate height and selective spacer formationINTEL CORP·Filed 2023·Application pending·0 cites
- 2854US2024332290A1Transistor with channel-symmetric gateINTEL CORP·Filed 2023·Application pending·0 cites
- 2954US2024213250A1Self-aligned backbone for forksheet transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3053US2024332299A1Integrated circuit device with heterogenous transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3153US2025006812A1N-type transistor fabrication in complementary fet (cfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3252US2024332432A1Varactor comprising high performance thin film transistor materialINTEL CORP·Filed 2023·Application pending·0 cites
- 3351US2025220969A1Gate-all-around devices with different gate lengthsINTEL CORP·Filed 2023·Application pending·0 cites
- 3451US2025311332A1Integrated circuit structures having uniform grid metal gate and trench contact cut plugged with air gap structureINTEL CORP·Filed 2024·Application pending·0 cites
- 3550US2024332285A1Circuit components with high performance thin film transistor materialINTEL CORP·Filed 2023·Application pending·0 cites
- 3650US2024332166A1Integrated circuit structures having air gapsINTEL CORP·Filed 2023·Application pending·0 cites
- 3749US12249577B2Cap structure for interconnect dielectrics and methods of fabricationINTEL CORP·Filed 2020·Granted Mar 11, 2025·0 cites·20 claims
- 3849US2023163212A1Gate-all-around transistor device with compressively strained channel layersINTEL CORP·Filed 2021·Application pending·0 cites
- 3949US2025105148A1Differentiated conductive lines for advanced integrated circuit structure fabricationINTEL CORP·Filed 2023·Application pending·0 cites
- 4048US12087614B2Gap fill dielectrics for electrical isolation of transistor structures in the manufacture of integrated circuitsINTEL CORP·Filed 2020·Granted Sep 10, 2024·0 cites·10 claims
- 4148US2022199760A1Integrated circuit device having backend double-walled capacitorsINTEL CORP·Filed 2020·Application pending·0 cites
- 4247US2024006512A1In-situ multi-layer dielectric films for application as gate spacer and etch stop layersINTEL CORP·Filed 2022·Application pending·0 cites
- 4345US11152254B2Pitch quartered three-dimensional air gapsINTEL CORP·Filed 2016·Granted Oct 19, 2021·0 cites·9 claims
- 4444US2023317809A1Selective passivation for epi growth in presence of metallic contactsINTEL CORP·Filed 2022·Application pending·0 cites
- 4542US10643946B2Nitrogen assisted oxide gapfillINTEL CORP·Filed 2018·Granted May 5, 2020·0 cites·20 claims
- 4633US2020211833A1Seam-free silicon nitride gap-fill techniques for high aspect ratio trenchesINTEL CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →