Inventor · disambiguated record
Suzuka Nishimura
Also filed as: NISHIMURA SUZUKA
5 granted patents·1 pending application·221 citations·filing 1999–2015
78Inventor score
Files withNITTO OPTICAL CO LTD2SHOWA DENKO KK2JAPAN SCIENCE AND TECHNOLGOY A1NITTO KOKI KABUSHIKI KAISHA1
Top patents by PatentIndex Score
6 records- 0192US6069021AMethod of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layerSHOWA DENKO KK·Filed 1999·Granted May 30, 2000·189 cites·10 claims
- 0281US6194744B1Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layerSHOWA DENKO KK·Filed 2000·Granted Feb 27, 2001·30 cites·6 claims
- 0358US7696690B2Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystalsJAPAN SCIENCE AND TECHNOLGOY A·Filed 2005·Granted Apr 13, 2010·2 cites·18 claims
- 0443US2010297786A1Method for Manufacturing Compound Semiconductor and Apparatus for Manufacturing the SameNITTO KOKI KABUSHIKI KAISHA·Filed 2007·Application pending·0 cites
- 0534US9755111B2Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)NITTO OPTICAL CO LTD·Filed 2015·Granted Sep 5, 2017·0 cites·9 claims
- 0631US9595632B2Method for producing GaN-based crystal and semiconductor deviceNITTO OPTICAL CO LTD·Filed 2015·Granted Mar 14, 2017·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →