Inventor · disambiguated record
Suhyueon Park
Also filed as: PARK SUHYUEON
2 granted patents·0 citations·filing 2020–2021
27Inventor score
Files withSAMSUNG ELECTRONICS CO LTD2
Top patents by PatentIndex Score
2 records- 0167US11682698B2Semiconductor devices including source/drain regions having antimony doped layersSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 0262US11211454B2Semiconductor devices including source/drain regions having antimony doped layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →