Inventor · disambiguated record
Sunil Shim
Also filed as: SHIM SUNIL
72 granted patents·12 pending applications·1,113 citations·filing 2009–2025
99Inventor score
Top patents by PatentIndex Score
84 records- 0199US8767473B2Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed therebySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 1, 2014·64 cites·6 claims
- 0299US8278170B2Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2011·Granted Oct 2, 2012·117 cites·19 claims
- 0398US8946665B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 3, 2015·99 cites·25 claims
- 0497US9136005B2Erasing methods of three-dimensional nonvolatile memory devices with cell strings and dummy word linesCHOE BYEONG-IN·Filed 2013·Granted Sep 15, 2015·43 cites·17 claims
- 0597US8559224B2Nonvolatile memory device, operating method thereof, and memory system including the sameHAN JINMAN·Filed 2011·Granted Oct 15, 2013·36 cites·39 claims
- 0697US8427878B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSHIM SUNIL·Filed 2011·Granted Apr 23, 2013·33 cites·19 claims
- 0797US8395190B2Three-dimensional semiconductor memory deviceSHIM SUNIL·Filed 2010·Granted Mar 12, 2013·40 cites·20 claims
- 0897US8319275B2Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristicsSHIM SUNIL·Filed 2010·Granted Nov 27, 2012·28 cites·13 claims
- 0997US8013389B2Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·73 cites·20 claims
- 1096US9117923B2Three-dimensional semiconductor memory device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 25, 2015·30 cites·13 claims
- 1196US8908431B2Control method of nonvolatile memory deviceSHIM SUNIL·Filed 2012·Granted Dec 9, 2014·29 cites·23 claims
- 1296US8614917B2Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistorsSHIM SUNIL·Filed 2011·Granted Dec 24, 2013·21 cites·11 claims
- 1396US8488381B2Non-volatile memory device having vertical structure and method of operating the sameKIM DOOGON·Filed 2010·Granted Jul 16, 2013·39 cites·14 claims
- 1496US8409977B2Three-dimensional semiconductor memory device and a method of fabricating the sameSHIM SUNIL·Filed 2010·Granted Apr 2, 2013·61 cites·27 claims
- 1596US8284601B2Semiconductor memory device comprising three-dimensional memory cell arraySON BYOUNGKEUN·Filed 2010·Granted Oct 9, 2012·40 cites·45 claims
- 1694US9111617B2Three-dimensional semiconductor memory deviceSHIM SUNIL·Filed 2012·Granted Aug 18, 2015·20 cites·8 claims
- 1794US8576629B2Operating method of nonvolatile memory deviceCHOE BYEONG-IN·Filed 2011·Granted Nov 5, 2013·21 cites·20 claims
- 1893US12327757B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 10, 2025·2 cites·19 claims
- 1993US9330770B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 3, 2016·9 cites·20 claims
- 2093US9331095B2Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 3, 2016·11 cites·19 claims
- 2193US8873294B2Nonvolatile memory devices, erasing methods thereof and memory systems including the sameSHIM SUNIL·Filed 2011·Granted Oct 28, 2014·18 cites·23 claims
- 2293US8787082B2Semiconductor memory device comprising three-dimensional memory cell arraySON BYOUNGKEUN·Filed 2012·Granted Jul 22, 2014·19 cites·9 claims
- 2393US8519472B2Semiconductor device and method of forming the sameJEONG JAEHUN·Filed 2010·Granted Aug 27, 2013·22 cites·20 claims
- 2492US8916926B2Nonvolatile memory device and method of making the sameCHOE BYEONG-IN·Filed 2011·Granted Dec 23, 2014·17 cites·16 claims
- 2591US9679659B2Methods of operating a nonvolatile memory deviceSHIM SUNIL·Filed 2015·Granted Jun 13, 2017·15 cites·7 claims
- 2691US8923053B2Nonvolatile memory device, operating method thereof, and memory system including the sameHAN JINMAN·Filed 2013·Granted Dec 30, 2014·12 cites·21 claims
- 2791US8824209B2Non-volatile memory device having vertical structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 2, 2014·11 cites·18 claims
- 2891US8426301B2Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devicesOH JIN-YONG·Filed 2011·Granted Apr 23, 2013·19 cites·24 claims
- 2990US9698155B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 4, 2017·8 cites·19 claims
- 3090US8514625B2Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed therebySHIM SUNIL·Filed 2010·Granted Aug 20, 2013·11 cites·9 claims
- 3189US9177613B2Semiconductor deviceLEE WOOKHYOUNG·Filed 2013·Granted Nov 3, 2015·13 cites·20 claims
- 3289US8637920B2Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 28, 2014·8 cites·10 claims
- 3389US8546869B2Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2012·Granted Oct 1, 2013·8 cites·3 claims
- 3488US9917094B2Semiconductor device having staggered pillarsLEE WOOKHYOUNG·Filed 2015·Granted Mar 13, 2018·7 cites·7 claims
- 3587US11637117B2Semiconductor device having selection line stud connected to string selection lineSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 25, 2023·2 cites·20 claims
- 3687US9412450B2Three-dimensional nonvolatile memory and operating method of three-dimensional nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·11 cites·19 claims
- 3787US9147492B2Control method of nonvolatile memory deviceSHIM SUNIL·Filed 2014·Granted Sep 29, 2015·8 cites·19 claims
- 3887US8743614B2Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 3, 2014·7 cites·17 claims
- 3986US8603906B2Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regionsSHIM SUNIL·Filed 2013·Granted Dec 10, 2013·6 cites·12 claims
- 4085US12347777B2Semiconductor device and a data storage system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 1, 2025·1 cites·20 claims
- 4185US8923060B2Nonvolatile memory devices and operating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Dec 30, 2014·9 cites·20 claims
- 4285US2025343167A1Vertical memory devices including insulating interlayer covering circuit pattern and intermediate insulation layer on the insulating interlayerSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4384US8488402B2Nonvolatile memory device and method of reading the same using different precharge voltagesSHIM SUNIL·Filed 2011·Granted Jul 16, 2013·7 cites·20 claims
- 4484US8115259B2Three-dimensional memory deviceSHIM SUNIL·Filed 2010·Granted Feb 14, 2012·7 cites·10 claims
- 4580US8107289B2Nonvolatile memory deviceSHIM SUNIL·Filed 2011·Granted Jan 31, 2012·5 cites·10 claims
- 4680US8027197B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 27, 2011·7 cites·18 claims
- 4779US12374635B2Vertical memory devices including insulating interlayer covering circuit pattern and intermediate insulation layer on the insulating interlayerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 4879US10396088B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·3 cites·20 claims
- 4979US9548123B2Operating methods of nonvolatile memory devices including a ground select transistor and first and second dummy memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 17, 2017·4 cites·20 claims
- 5077US8823072B2Floating gate type nonvolatile memory device and related methods of manufacture and operationKIM JAE HO·Filed 2011·Granted Sep 2, 2014·5 cites·8 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →