Inventor · disambiguated record
Sug-Hyun Sung
Also filed as: SUNG SUG HYUN
19 granted patents·7 pending applications·42 citations·filing 2007–2024
91Inventor score
Top patents by PatentIndex Score
26 records- 0197US10038093B2FIN field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 31, 2018·25 cites·19 claims
- 0282US9768169B2Semiconductor devices and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 19, 2017·3 cites·17 claims
- 0381US10103142B2Integrated circuit (IC) devices including stress inducing layersSUNG SUG HYUN·Filed 2016·Granted Oct 16, 2018·6 cites·20 claims
- 0480US10461189B2Fin field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 0573US9865495B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 9, 2018·2 cites·24 claims
- 0673US9620406B2Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patternsYOU JUNG-GUN·Filed 2015·Granted Apr 11, 2017·2 cites·19 claims
- 0772US11024509B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·1 cites·20 claims
- 0868US11521900B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·20 claims
- 0965US9711504B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·1 cites·17 claims
- 1063US2025140694A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1163US2025254961A1Semiconductor device with backside source/drain contact and air structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1261US10910275B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·0 cites·6 claims
- 1360US10707348B2Fin field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 7, 2020·0 cites·19 claims
- 1460US10522539B2Semiconductor devices and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·17 claims
- 1559US12074031B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·14 claims
- 1659US2025253151A1Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1757US10211204B2Semiconductor devices and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
- 1853US10475707B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 12, 2019·0 cites·10 claims
- 1951US2023282640A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2049US9859398B2Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized portions of the fin-shaped patternsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 2, 2018·0 cites·13 claims
- 2148US12477817B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 2240US10032864B2Semiconductor device having field insulation layer between two finsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 24, 2018·0 cites·16 claims
- 2340US2015132908A1Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2440US2007264810A1Semiconductor devices and methods of forming the sameKIM KI-CHUL·Filed 2007·Application pending·0 cites
- 2539US9887194B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 6, 2018·0 cites·18 claims
- 2638US2017263722A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →