Inventor · disambiguated record

Sung-Li Wang

Also filed as: WANG SUNG-LI

114 granted patents·58 pending applications·3,647 citations·filing 2004–2025

99Inventor score

Technology areasH10W H10P H10D H01L C23C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD159 TAIWAN SEMICONDUCTOR MFG6 UNIV NAT TAIWAN2 SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD1 TAIWAN SEMICONDUCTOR MANFACTURING CO LTD1

Top patents by PatentIndex Score

172 records

0199US9105490B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 11, 2015·1.6k cites·19 claims
0299US8823065B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 2, 2014·1.3k cites·16 claims
0398US11626494B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
0498US11393924B2Structure and formation method of semiconductor device with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·6 cites·20 claims
0598US9443769B2Wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·534 cites·15 claims
0697US11855215B2Semiconductor device structure with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
0797US11855177B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
0897US11482458B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·5 cites·20 claims
0997US11462471B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·6 cites·20 claims
1097US11043570B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·4 cites·20 claims
1196US11476365B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·4 cites·20 claims
1296US10049938B2Semiconductor devices, FinFET devices, and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 14, 2018·11 cites·20 claims
1396US9287138B2FinFET low resistivity contact formation methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·24 cites·20 claims
1495US11563083B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·3 cites·20 claims
1595US10854716B2Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·8 cites·20 claims
1695US9899258B1Metal liner overhang reduction and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·20 cites·20 claims
1795US2025374642A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1893US11158539B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·6 cites·19 claims
1993US10164042B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
2093US9099494B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·6 cites·20 claims
2192US11990376B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
2292US11233134B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·5 cites·20 claims
2392US10269649B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
2491US12040372B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
2591US11837544B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
2691US10593775B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 17, 2020·4 cites·20 claims
2791US9589838B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·5 cites·20 claims
2891US2025366038A1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2990US10867905B2Interconnect structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·20 claims
3090US10651091B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·3 cites·20 claims
3190US9941367B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
3289US11227794B2Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
3389US11011413B2Interconnect structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·6 cites·20 claims
3488US10475654B2Wrap-around contact plug and method manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·3 cites·20 claims
3588US2025324632A1Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3687US12341013B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
3787US10978354B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·3 cites·20 claims
3887US9647115B1Semiconductor structure with enhanced contact and method of manufacture the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·6 cites·20 claims
3986US12477808B2Semiconductor device having multi-layer epitaxial structures with different lattice constantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
4086US12148807B2Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·1 cites·20 claims
4186US2025349614A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4286US2025308901A1Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4385US12439623B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
4485US12334435B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
4585US12272602B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
4685US10847413B2Method of forming contact plugs for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·3 cites·20 claims
4784US12266688B2Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
4884US10636664B2Wrap-around contact plug and method manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 28, 2020·2 cites·20 claims
4984US2025351457A1Transistor insulating finsTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2025·Application pending·0 cites
5083US12027372B2Contact structures with deposited silicide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims

Showing the top 50 of 172 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →