Inventor · disambiguated record
Su-Youn Yi
Also filed as: YI SU-YOUN
12 granted patents·1 pending application·124 citations·filing 2006–2015
91Inventor score
Top patents by PatentIndex Score
13 records- 0197US8319275B2Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristicsSHIM SUNIL·Filed 2010·Granted Nov 27, 2012·28 cites·13 claims
- 0295US8084805B2Three-dimensional microelectronic devices including repeating layer patterns of different thicknessesSHIM SUN-IL·Filed 2009·Granted Dec 27, 2011·41 cites·29 claims
- 0393US8450788B2Three-dimensional microelectronic devices including horizontal and vertical patternsSHIM SUN-IL·Filed 2011·Granted May 28, 2013·14 cites·13 claims
- 0489US8637920B2Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 28, 2014·8 cites·10 claims
- 0586US8952438B2Three-dimensional microelectronic devices including horizontal and vertical patternsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 10, 2015·6 cites·16 claims
- 0680US8107289B2Nonvolatile memory deviceSHIM SUNIL·Filed 2011·Granted Jan 31, 2012·5 cites·10 claims
- 0780US8027197B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 27, 2011·7 cites·18 claims
- 0876US8933505B2Three-dimensional semiconductor memory deviceHUR SUNGHOI·Filed 2013·Granted Jan 13, 2015·5 cites·13 claims
- 0973US8445954B2Three-dimensional semiconductor memory deviceJANG YOUNGGOAN·Filed 2009·Granted May 21, 2013·6 cites·13 claims
- 1070US7696556B2Nonvolatile memory devices including high-voltage MOS transistors with floated drain-side auxiliary gates and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 13, 2010·4 cites·38 claims
- 1155US9012977B2Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristicsSHIM SUNIL·Filed 2014·Granted Apr 21, 2015·0 cites·18 claims
- 1243US9502413B2Semiconductor devices including raised source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·9 claims
- 1343US2013320457A1Semiconductor devices including source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →