Inventor · disambiguated record
Syotaro Ono
Also filed as: ONO SYOTARO
81 granted patents·31 pending applications·830 citations·filing 2001–2023
99Inventor score
Top patents by PatentIndex Score
112 records- 0196US8013360B2Semiconductor device having a junction of P type pillar region and N type pillar regionTOSHIBA KK·Filed 2010·Granted Sep 6, 2011·29 cites·8 claims
- 0296US6693338B2Power semiconductor device having RESURF layerTOSHIBA KK·Filed 2002·Granted Feb 17, 2004·119 cites·26 claims
- 0395US7737469B2Semiconductor device having superjunction structure formed of p-type and n-type pillar regionsTOSHIBA KK·Filed 2007·Granted Jun 15, 2010·36 cites·9 claims
- 0495US7576393B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Aug 18, 2009·36 cites·16 claims
- 0594US7230297B2Trench-gated MOSFET including schottky diode thereinTOSHIBA KK·Filed 2005·Granted Jun 12, 2007·28 cites·22 claims
- 0694US6787848B2Vertical type power mosfet having trenched gate structureTOSHIBA KK·Filed 2002·Granted Sep 7, 2004·81 cites·43 claims
- 0793US8716789B2Power semiconductor deviceONO SYOTARO·Filed 2012·Granted May 6, 2014·15 cites·20 claims
- 0892US7541643B2Semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jun 2, 2009·25 cites·18 claims
- 0991US9349721B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted May 24, 2016·11 cites·13 claims
- 1091US8487374B2Power semiconductor deviceOHTA HIROSHI·Filed 2011·Granted Jul 16, 2013·15 cites·19 claims
- 1190US7919824B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Apr 5, 2011·17 cites·14 claims
- 1288US9041101B2Power semiconductor deviceTOSHIBA KK·Filed 2014·Granted May 26, 2015·8 cites·20 claims
- 1388US8049270B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Nov 1, 2011·16 cites·15 claims
- 1487US8860144B2Power semiconductor deviceTOSHIBA KK·Filed 2013·Granted Oct 14, 2014·8 cites·4 claims
- 1587US8829608B2Semiconductor deviceSAITO WATARU·Filed 2011·Granted Sep 9, 2014·10 cites·20 claims
- 1686US9059284B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Jun 16, 2015·7 cites·20 claims
- 1786US7759733B2Power semiconductor device and method for producing the sameTOSHIBA KK·Filed 2008·Granted Jul 20, 2010·13 cites·7 claims
- 1886US7564097B2Trench-gated MOSFET including schottky diode thereinTOSHIBA KK·Filed 2007·Granted Jul 21, 2009·10 cites·6 claims
- 1985US8232593B2Power semiconductor deviceSAITO WATARU·Filed 2010·Granted Jul 31, 2012·9 cites·16 claims
- 2085US7253473B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Aug 7, 2007·10 cites·20 claims
- 2185US6838730B1Semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jan 4, 2005·36 cites·10 claims
- 2284US7989910B2Semiconductor device including a resurf region with forward tapered teethTOSHIBA KK·Filed 2008·Granted Aug 2, 2011·11 cites·18 claims
- 2384US7812392B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Oct 12, 2010·11 cites·20 claims
- 2484US7755138B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jul 13, 2010·11 cites·20 claims
- 2584US7605426B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 20, 2009·11 cites·20 claims
- 2682US8772869B2Power semiconductor deviceSAITO WATARU·Filed 2008·Granted Jul 8, 2014·10 cites·20 claims
- 2782US7622771B2Semiconductor apparatusTOSHIBA KK·Filed 2008·Granted Nov 24, 2009·10 cites·20 claims
- 2882US7485921B2Trench gate type MOS transistor semiconductor deviceTOSHIBA KK·Filed 2007·Granted Feb 3, 2009·10 cites·8 claims
- 2982US7061047B2Semiconductor device having trench gate structure and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jun 13, 2006·26 cites·56 claims
- 3082US6720618B2Power MOSFET deviceTOSHIBA KK·Filed 2002·Granted Apr 13, 2004·24 cites·14 claims
- 3181US7759732B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jul 20, 2010·8 cites·9 claims
- 3280US7061060B2Offset-gate-type semiconductor deviceTOSHIBA KK·Filed 2003·Granted Jun 13, 2006·19 cites·17 claims
- 3380US6552389B2Offset-gate-type semiconductor deviceTOSHIBA KK·Filed 2001·Granted Apr 22, 2003·19 cites·12 claims
- 3479US8816410B2Semiconductor deviceSAITO WATARU·Filed 2012·Granted Aug 26, 2014·4 cites·18 claims
- 3577US8643091B2Semiconductor deviceSAITO WATARU·Filed 2011·Granted Feb 4, 2014·4 cites·20 claims
- 3677US8592917B2Semiconductor device and method for manufacturing sameONO SYOTARO·Filed 2011·Granted Nov 26, 2013·4 cites·18 claims
- 3776US8188521B2Power semiconductor deviceSAITO WATARU·Filed 2010·Granted May 29, 2012·5 cites·20 claims
- 3876US7663186B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Feb 16, 2010·4 cites·18 claims
- 3972US9142627B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Sep 22, 2015·3 cites·20 claims
- 4072US8907420B2Power semiconductor deviceSAITO WATARU·Filed 2010·Granted Dec 9, 2014·3 cites·10 claims
- 4170US7800175B2Vertical power semiconductor device with high breakdown voltage corresponding to edge termination and device regionsTOSHIBA KK·Filed 2008·Granted Sep 21, 2010·4 cites·20 claims
- 4270US7479678B2Semiconductor element and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jan 20, 2009·4 cites·8 claims
- 4370US6977414B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Dec 20, 2005·15 cites·18 claims
- 4469US6818945B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Nov 16, 2004·14 cites·15 claims
- 4568US9093474B2Electric power semiconductor device and manufacturing method of the sameSAITO WATARU·Filed 2012·Granted Jul 28, 2015·2 cites·9 claims
- 4668US8283720B2Power semiconductor deviceSAITO WATARU·Filed 2008·Granted Oct 9, 2012·5 cites·20 claims
- 4768US8227854B2Semiconductor device having first and second resurf layersONO SYOTARO·Filed 2007·Granted Jul 24, 2012·4 cites·20 claims
- 4868US8125023B2Vertical type power semiconductor device having a super junction structureOHTA HIROSHI·Filed 2009·Granted Feb 28, 2012·4 cites·20 claims
- 4967US10411117B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Sep 10, 2019·1 cites·4 claims
- 5066US10103222B2Semiconductor deviceTOSHIBA KK·Filed 2016·Granted Oct 16, 2018·1 cites·19 claims
Showing the top 50 of 112 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →