Inventor · disambiguated record
Syd R. Wilson
Also filed as: WILSON SYD R · WILSON SYD ROBERT
17 granted patents·908 citations·filing 1984–1999
96Inventor score
Top patents by PatentIndex Score
17 records- 0197US5424245AMethod of forming vias through two-sided substrateMOTOROLA INC·Filed 1994·Granted Jun 13, 1995·318 cites·5 claims
- 0286US5753560AMethod for fabricating a semiconductor device using lateral getteringMOTOROLA INC·Filed 1996·Granted May 19, 1998·102 cites·20 claims
- 0386US4683637AForming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealingMOTOROLA INC·Filed 1986·Granted Aug 4, 1987·92 cites·7 claims
- 0484US4943539AProcess for making a multilayer metallization structureMOTOROLA INC·Filed 1989·Granted Jul 24, 1990·70 cites·10 claims
- 0580US4682407AMeans and method for stabilizing polycrystalline semiconductor layersMOTOROLA INC·Filed 1986·Granted Jul 28, 1987·60 cites·25 claims
- 0673US6355541B1Method for transfer of thin-film of silicon carbide via implantation and wafer bondingLOCKHEED MARTIN ENERGY RES COR·Filed 1999·Granted Mar 12, 2002·46 cites·20 claims
- 0771US5217920AMethod of forming substrate contact trenches and isolation trenches using anodization for isolationMOTOROLA INC·Filed 1992·Granted Jun 8, 1993·50 cites·13 claims
- 0870US4799392AMethod for determining silicon (mass 28) beam purity prior to implantation of gallium arsenideMOTOROLA INC·Filed 1987·Granted Jan 24, 1989·18 cites·5 claims
- 0967US4740481AMethod of preventing hillock formation in polysilicon layer by oxygen implanationMOTOROLA INC·Filed 1986·Granted Apr 26, 1988·34 cites·3 claims
- 1066US5112772AMethod of fabricating a trench structureMOTOROLA INC·Filed 1991·Granted May 12, 1992·38 cites·14 claims
- 1158US4621413AFabricating a semiconductor device with reduced gate leakageMOTOROLA INC·Filed 1985·Granted Nov 11, 1986·25 cites·11 claims
- 1248US5933750AMethod of fabricating a semiconductor device with a thinned substrateMOTOROLA INC·Filed 1998·Granted Aug 3, 1999·14 cites·16 claims
- 1345US5554889AStructure and method for metallization of semiconductor devicesMOTOROLA INC·Filed 1995·Granted Sep 10, 1996·11 cites·5 claims
- 1444US4717588AMetal redistribution by rapid thermal processingMOTOROLA INC·Filed 1985·Granted Jan 5, 1988·12 cites·10 claims
- 1540US4732866AMethod for producing low noise, high grade constant semiconductor junctionsMOTOROLA INC·Filed 1984·Granted Mar 22, 1988·13 cites·4 claims
- 1634US6180495B1Silicon carbide transistor and method thereforMOTOROLA INC·Filed 1998·Granted Jan 30, 2001·3 cites·3 claims
- 1730US5700721AStructure and method for metallization of semiconductor devicesMOTOROLA INC·Filed 1996·Granted Dec 23, 1997·2 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →