Inventor · disambiguated record
Szu-Yao Chang
Also filed as: CHANG SZU-YAO
8 granted patents·1 pending application·6 citations·filing 2018–2023
76Inventor score
Top patents by PatentIndex Score
9 records- 0182US10453947B1Semiconductor structure and high electron mobility transistor with a substrate having a pit, and methods for fabricating semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Oct 22, 2019·4 cites·17 claims
- 0273US11264389B2Stack capacitor structure and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Mar 1, 2022·1 cites·18 claims
- 0371US2024023316A1Semiconductor structure and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 0469US11342335B2Semiconductor structure having a gate structure portion in a word lineNANYA TECHNOLOGY CORP·Filed 2019·Granted May 24, 2022·1 cites·14 claims
- 0568US11574911B2Method for fabricating semiconductor device with protruding contactNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 7, 2023·0 cites·18 claims
- 0665US11469231B2Semiconductor device with protruding contact and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Oct 11, 2022·0 cites·16 claims
- 0764US11641734B2Method of forming a semiconductor structure having a gate structure electrically connected to a word lineNANYA TECHNOLOGY CORP·Filed 2022·Granted May 2, 2023·0 cites·6 claims
- 0856US12219749B2Method of manufacturing semiconductor device structure having a channel layer with different roughnessNANYA TECHNOLOGY CORP·Filed 2022·Granted Feb 4, 2025·0 cites·10 claims
- 0954US12363886B2Semiconductor device structure having a channel layer with different roughnessNANYA TECHNOLOGY CORP·Filed 2022·Granted Jul 15, 2025·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →