Inventor · disambiguated record
Szu-Hua Chen
Also filed as: CHEN SZU-HUA
5 granted patents·24 pending applications·2 citations·filing 2005–2025
66Inventor score
Top patents by PatentIndex Score
29 records- 0190US12336235B2Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·1 cites·14 claims
- 0286US12136570B2Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 0378US2025357111A1Dielectric densificationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0477US2025359292A1Gate Patterning for Stacked Device StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0577US2025351550A1Stacked multi-gate device with contact feature and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US2025357197A1Thermal conductive barrier layer in interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0776US2025349535A1Semiconductor Device Having Dielectric Material Treated with Microwave Plasma and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0875US2025366104A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0975US2025351547A1Semiconductor Device and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1074US2025275195A1Manufacturing method of semiconductor device having isolation structure formed of low-k dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1173US2025338575A1Semiconductor structure with gate isolation layer and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1273US2024395627A1Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1373US2024387645A1Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1470US2025261432A1Stacked multi-gate device with contact feature and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1569US2024266166A1Dielectric densificationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1669US2025140553A1Semiconductor Device Having Dielectric Material Treated with Microwave Plasma and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1769US2024363421A1Semiconductor Devices With A Rare Earth Metal Oxide LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1869US2025140607A1Thermal conductive barrier layer in interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1968US12315863B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 2068US2025159966A1Semiconductor Device and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2168US2024321640A1Gate Patterning for Stacked Device StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2267US2025234608A1Semiconductor Structure with Gate Isolation Layer and Manufacturing Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2364US12062576B2Semiconductor devices with a rare earth metal oxide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 2464US2023402528A1Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2562US2024072115A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2661US12501670B2Isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 2756US2025079316A1Semiconductor device and isolation structure and contact etch stop layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2852US2024047523A1Semiconductor device structure with boron- and nitrogen-containing material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2937US2006146016A1Method of zooming in a display image for a portable electrical deviceTATUNG CO LTD·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Szu-Hua Chen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →