Inventor · disambiguated record
Szu-An Wu
Also filed as: WU SZU-AN
36 granted patents·9 pending applications·429 citations·filing 1998–2019
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG23JANGJIAN SHIU-KO7TAIWAN SEMICONDUCTOR MFG CO LTD7CHANG SHIH-CHIEH1CHEN KEI-WEI1
Top patents by PatentIndex Score
45 records- 0197US9219092B2Grids in backside illumination image sensor chips and methods for forming the sameJANGJIAN SHIU-KO·Filed 2012·Granted Dec 22, 2015·24 cites·20 claims
- 0296US6136680AMethods to improve copper-fluorinated silica glass interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 24, 2000·133 cites·35 claims
- 0388US8021992B2High aspect ratio gap fill application using high density plasma chemical vapor depositionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 20, 2011·21 cites·18 claims
- 0485US8294202B2Metal gate structure of a semiconductor deviceJANGJIAN SHIU-KO·Filed 2010·Granted Oct 23, 2012·8 cites·21 claims
- 0584US6784077B1Shallow trench isolation processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 31, 2004·47 cites·21 claims
- 0681US6664177B1Dielectric ARC scheme to improve photo window in dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 16, 2003·31 cites·31 claims
- 0780US6479098B1Method to solve particle performance of FSG layer by using UFU season film for FSG processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 12, 2002·20 cites·21 claims
- 0879US9543234B2In-situ formation of silicon and tantalum containing barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·3 cites·18 claims
- 0977US9224773B2Metal shielding layer in backside illumination image sensor chips and methods for forming the sameCHANG SHIH-CHIEH·Filed 2012·Granted Dec 29, 2015·1 cites·20 claims
- 1076US6815007B1Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season filmTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 9, 2004·14 cites·24 claims
- 1175US6573189B1Manufacture method of metal bottom ARCTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 3, 2003·17 cites·17 claims
- 1274US6436791B1Method of manufacturing a very deep STI (shallow trench isolation)TAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·23 cites·25 claims
- 1372US11018176B2Metal shielding layer in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·20 claims
- 1472US8946083B2In-situ formation of silicon and tantalum containing barrierJANGJIAN SHIU-KO·Filed 2011·Granted Feb 3, 2015·2 cites·20 claims
- 1570US9620555B2Metal shielding layer in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·1 cites·20 claims
- 1669US6802935B2Semiconductor chamber process apparatus and methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 12, 2004·13 cites·15 claims
- 1769US6586347B1Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 1, 2003·16 cites·32 claims
- 1868US8470390B2Oxidation-free copper metallization process using in-situ bakingWANG YU-SHENG·Filed 2008·Granted Jun 25, 2013·3 cites·20 claims
- 1965US7349086B2Systems and methods for optical measurementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 25, 2008·1 cites·22 claims
- 2063US6585826B2Semiconductor wafer cleaning method to remove residual contamination including metal nitride particlesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 1, 2003·10 cites·7 claims
- 2160US9123608B2Backside illuminated CMOS image sensorJANGJIAN SHIU-KO·Filed 2012·Granted Sep 1, 2015·0 cites·20 claims
- 2260US7611589B2Methods of spin-on wafer cleaningTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 3, 2009·1 cites·14 claims
- 2358US8847286B2Image sensor and method of manufacturingJANGJIAN SHIU-KO·Filed 2012·Granted Sep 30, 2014·0 cites·9 claims
- 2457US10276621B2Metal shielding layer in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
- 2557US6815072B2Method to solve particle performance of FSG layer by using UFU season film for FSG processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 9, 2004·2 cites·10 claims
- 2653US9786707B2Image sensor isolation region and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 10, 2017·0 cites·20 claims
- 2752US9978784B2Grids in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·0 cites·20 claims
- 2851US6602560B2Method for removing residual fluorine in HDP-CVD chamberTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 5, 2003·2 cites·16 claims
- 2951US6060374AMonitor for molecular nitrogen during silicon implantTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted May 9, 2000·16 cites·19 claims
- 3050US9673244B2Image sensor isolation region and method of forming the sameJANGJIAN SHIU-KO·Filed 2012·Granted Jun 6, 2017·0 cites·20 claims
- 3149US6281146B1Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformityTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 28, 2001·14 cites·17 claims
- 3248US6985222B2Chamber leakage detection by measurement of reflectivity of oxidized thin filmTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 10, 2006·0 cites·32 claims
- 3348US6979656B2Carbon and halogen doped silicate glass dielectric layer and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 27, 2005·0 cites·18 claims
- 3447US9502290B2Oxidation-free copper metallization process using in-situ bakingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 22, 2016·0 cites·20 claims
- 3546US2006196417A1Gas distribution systems for deposition processesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 3641US2009127097A1Forming Seed Layer in Nano-Trench Structure Using Net Deposition and Net EtchCHEN KEI-WEI·Filed 2007·Application pending·0 cites
- 3740US2007026653A1Cap layer on doped dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 3839US2006105558A1Inter-metal dielectric scheme for semiconductorsCHUANG HARRY·Filed 2004·Application pending·0 cites
- 3938US2013075831A1Metal gate stack having tialn blocking/wetting layerJANGJIAN SHIU-KO·Filed 2011·Application pending·0 cites
- 4038US2006166458A1Method for forming shallow trench isolation structuresCHENG YI-LUNG·Filed 2005·Application pending·0 cites
- 4137US8778602B2Single photoresist approach for high challenge photo processPAN HUNG-TING·Filed 2009·Granted Jul 15, 2014·0 cites·18 claims
- 4237US2005009367A1Novel method to increase fluorine stability to improve gap fill ability and reduce k value of fluorine silicate glass (FSG) filmTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 4337US2006017166A1Robust fluorine containing Silica Glass (FSG) Film with less free fluorineLEU PO-HSIUNG·Filed 2004·Application pending·0 cites
- 4437US2006205232A1Film treatment method preventing blocked etch of low-K dielectricsLI LIH-PING·Filed 2005·Application pending·0 cites
- 4532US6358761B1Silicon monitor for detection of H2O2 in acid bathTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 19, 2002·6 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →