Inventor · disambiguated record
Szu-Chi Yang
Also filed as: YANG SZU-CHI
11 granted patents·11 pending applications·8 citations·filing 2016–2025
83Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD22
Top patents by PatentIndex Score
22 records- 0194US11996468B2Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·3 cites·20 claims
- 0293US11581226B2Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·20 claims
- 0389US11217679B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·20 claims
- 0484US2025366094A1Semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US12218227B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0679US2024395902A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0779US2025133761A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0875US2024413018A1Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0975US2024250174A1Mechanisms for growing epitaxy structure of finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1075US2024387274A1Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1174US11949015B2Mechanisms for growing epitaxy structure of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 1274US2025359151A1Source/Drain Structure with Bottom InsulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1374US2024395860A1Semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1473US12142668B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1573US2024313090A1Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1671US12112989B2Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 1770US2023326802A1Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1869US11742416B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1968US2025331230A1Source/Drain Structure with Bottom InsulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2067US12261203B2Semiconductor device structure with gate stack and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 2165US11670551B2Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 2254US11437516B2Mechanisms for growing epitaxy structure of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 6, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →