Inventor · disambiguated record
Takashi Ajima
Also filed as: AJIMA TAKASHI · UCHIDA MASATO
17 granted patents·597 citations·filing 1976–1987
95Inventor score
Top patents by PatentIndex Score
17 records- 0198US4618878ASemiconductor device having a multilayer wiring structure using a polyimide resinTOSHIBA KK·Filed 1984·Granted Oct 21, 1986·268 cites·7 claims
- 0287US4520041AMethod for forming metallization structure having flat surface on semiconductor substrateTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 28, 1985·65 cites·9 claims
- 0385US4161743ASemiconductor device with silicon carbide-glass-silicon carbide passivating overcoatTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Jul 17, 1979·49 cites·22 claims
- 0473US4636832ASemiconductor device with an improved bonding sectionTOKYO SHIBAURA ELECTRIC CO·Filed 1986·Granted Jan 13, 1987·41 cites·4 claims
- 0570US4613888ASemiconductor device of multilayer wiring structureTOSHIBA KK·Filed 1984·Granted Sep 23, 1986·30 cites·16 claims
- 0669US4853760ASemiconductor device having insulating layer including polyimide filmTOKYO SHIBAURA ELECTRIC CO·Filed 1987·Granted Aug 1, 1989·36 cites·8 claims
- 0765US4351894AMethod of manufacturing a semiconductor device using silicon carbide maskTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 28, 1982·24 cites·14 claims
- 0854US4146413AMethod of producing a P-N junction utilizing polycrystalline siliconTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Mar 27, 1979·16 cites·2 claims
- 0951US4123564AMethod of producing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Oct 31, 1978·13 cites·21 claims
- 1042US4462856ASystem for etching a metal film on a semiconductor waferTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jul 31, 1984·10 cites·3 claims
- 1142US4224636ASemiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layerTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Sep 23, 1980·9 cites·8 claims
- 1240US4479830AMethod of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment markerTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Oct 30, 1984·9 cites·5 claims
- 1339US4560642AMethod of manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Dec 24, 1985·8 cites·3 claims
- 1437US4415372AMethod of making transistors by ion implantations, electron beam irradiation and thermal annealingTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Nov 15, 1983·7 cites·5 claims
- 1535US4426234AMethod of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealingTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Jan 17, 1984·6 cites·6 claims
- 1632US4515642AMethod of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed therebyTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 7, 1985·3 cites·8 claims
- 1731US4404736AMethod for manufacturing a semiconductor device of mesa typeTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 20, 1983·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →