Inventor · disambiguated record
Takeshi Akatsu
Also filed as: AKATSU TAKESHI · RAYSSAC LEGAL REPRESENTATIVE GISELE
21 granted patents·8 pending applications·170 citations·filing 2003–2020
95Inventor score
Files withSOITEC SILICON ON INSULATOR23CHHAIMI NABIL1CRAIF INC1DAVAL NICOLAS1QUANTUM BIOSYSTEMS INC1
Top patents by PatentIndex Score
29 records- 0190US7449394B2Atomic implantation and thermal treatment of a semiconductor layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Nov 11, 2008·20 cites·19 claims
- 0288US7256075B2Recycling of a wafer comprising a multi-layer structure after taking-off a thin layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 14, 2007·20 cites·30 claims
- 0386US7323398B2Method of layer transfer comprising sequential implantations of atomic speciesSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jan 29, 2008·16 cites·16 claims
- 0484US7326628B2Thin layer transfer method utilizing co-implantation to reduce blister formation and to surface roughnessSOITEC SILICON ON INSULATOR·Filed 2005·Granted Feb 5, 2008·18 cites·16 claims
- 0582US7476930B2Multi-gate FET with multi-layer channelSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 13, 2009·9 cites·18 claims
- 0682US7282449B2Thermal treatment of a semiconductor layerSOITEC SILICON ON INSULATOR·Filed 2006·Granted Oct 16, 2007·8 cites·21 claims
- 0777US7276428B2Methods for forming a semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 2, 2007·7 cites·22 claims
- 0877US7001826B2Wafer with a relaxed useful layer and method of forming the waferSOITEC SILICON ON INSULATOR·Filed 2003·Granted Feb 21, 2006·19 cites·15 claims
- 0976US7375008B2Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereofSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 20, 2008·6 cites·27 claims
- 1076US7008857B2Recycling a wafer comprising a buffer layer, after having separated a thin layer therefromSOITEC SILICON ON INSULATOR·Filed 2004·Granted Mar 7, 2006·16 cites·36 claims
- 1171US7602046B2Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereofSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 13, 2009·4 cites·22 claims
- 1268US7285495B2Methods for thermally treating a semiconductor layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 23, 2007·4 cites·19 claims
- 1362US7232488B2Method of fabrication of a substrate for an epitaxial growthSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jun 19, 2007·10 cites·20 claims
- 1461US7776716B2Method for fabricating a semiconductor on insulator waferSOITEC SILICON ON INSULATOR·Filed 2007·Granted Aug 17, 2010·2 cites·28 claims
- 1558US8012289B2Method of fabricating a release substrateSOITEC SILICON ON INSULATOR·Filed 2009·Granted Sep 6, 2011·0 cites·22 claims
- 1654US6982210B2Method for manufacturing a multilayer semiconductor structure that includes an irregular layerSOITEC SILICON ON INSULATOR·Filed 2003·Granted Jan 3, 2006·6 cites·21 claims
- 1754US2009325362A1Method of recycling an epitaxied donor waferCHHAIMI NABIL·Filed 2009·Application pending·0 cites
- 1852US7033905B2Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical meansSOITEC SILICON ON INSULATOR·Filed 2003·Granted Apr 25, 2006·5 cites·33 claims
- 1950US7544265B2Method of fabricating a release substrateSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jun 9, 2009·0 cites·20 claims
- 2050US7378729B2Recycling a wafer comprising a buffer layer, after having separated a thin layer therefromSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 27, 2008·0 cites·20 claims
- 2150US2022143613A1Biomolecule recovering device and method, and biomolecule analyzing device and methodCRAIF INC·Filed 2020·Application pending·0 cites
- 2249US2011233733A1Method of fabricating a release substrateSOITEC SILICON ON INSULATOR·Filed 2011·Application pending·0 cites
- 2349US2019071720A1Devices, systems and methods for nucleic acid sequencingQUANTUM BIOSYSTEMS INC·Filed 2018·Application pending·0 cites
- 2448US7265435B2Method for implanting atomic species through an uneven surface of a semiconductor layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Sep 4, 2007·0 cites·13 claims
- 2545US2006030087A1Compliant substrate for a heteroepitaxial structure and method for making sameSOITEC SILICON ON INSULATOR·Filed 2005·Application pending·0 cites
- 2644US2010167500A1Method of recycling an epitaxied donor waferS O TEC SILICON ON INSULATOR T·Filed 2010·Application pending·0 cites
- 2742US7018913B2Method for implanting atomic species through an uneven surface of a semiconductor layerSOITEC SILICON ON INSULATOR·Filed 2004·Granted Mar 28, 2006·0 cites·18 claims
- 2839US2004140479A1Compliant substrate for a heteroepitaxial structure and method for making sameFiled 2004·Application pending·0 cites
- 2937US2006014363A1Thermal treatment of a semiconductor layerDAVAL NICOLAS·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →