Inventor · disambiguated record
Takeharu Asano
Also filed as: ASANO TAKEHARU
22 granted patents·6 pending applications·228 citations·filing 1994–2013
96Inventor score
Top patents by PatentIndex Score
28 records- 0189US6870193B2Semiconductor light emitting device and its manufacturing methodSONY CORP·Filed 2003·Granted Mar 22, 2005·22 cites·17 claims
- 0288US6509579B2Semiconductor deviceSONY CORP·Filed 2001·Granted Jan 21, 2003·45 cites·20 claims
- 0383US6972206B2Nitride semiconductor, semiconductor device, and method of manufacturing the sameSONY CORP·Filed 2005·Granted Dec 6, 2005·6 cites·18 claims
- 0482US8654810B2Light-emitting device and method of manufacturing the sameFUKASAWA HIROYUKI·Filed 2010·Granted Feb 18, 2014·9 cites·12 claims
- 0582US6991952B2Method of manufacturing semiconductor deviceSONY CORP·Filed 2003·Granted Jan 31, 2006·17 cites·10 claims
- 0682US6829270B2Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor deviceSONY CORP·Filed 2002·Granted Dec 7, 2004·24 cites·9 claims
- 0781US7964419B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2008·Granted Jun 21, 2011·4 cites·13 claims
- 0881US7282379B2Nitride semiconductor, semiconductor device, and method of manufacturing the sameSONY CORP·Filed 2005·Granted Oct 16, 2007·5 cites·26 claims
- 0979US6939730B2Nitride semiconductor, semiconductor device, and method of manufacturing the sameSONY CORP·Filed 2002·Granted Sep 6, 2005·16 cites·27 claims
- 1078US6620641B2Semiconductor light emitting device and its manufacturing methodSONY CORP·Filed 2002·Granted Sep 16, 2003·14 cites·8 claims
- 1173US6836498B2Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereofSONY CORP·Filed 2001·Granted Dec 28, 2004·14 cites·18 claims
- 1270US7339195B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2003·Granted Mar 4, 2008·6 cites·18 claims
- 1370US6577662B1Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereofSONY CORP·Filed 2000·Granted Jun 10, 2003·9 cites·12 claims
- 1465US7439546B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2006·Granted Oct 21, 2008·1 cites·6 claims
- 1564US7672349B2Laser diodeSONY CORP·Filed 2006·Granted Mar 2, 2010·5 cites·13 claims
- 1660US6890785B2Nitride semiconductor, semiconductor device, and manufacturing methods for the sameSONY CORP·Filed 2003·Granted May 10, 2005·6 cites·7 claims
- 1754US8587004B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2013·Granted Nov 19, 2013·0 cites·5 claims
- 1854US7125732B2Semiconductor light emitting device and its manufacturing methodSONY CORP·Filed 2004·Granted Oct 24, 2006·2 cites·14 claims
- 1950US7026179B2Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrateSONY CORP·Filed 2004·Granted Apr 11, 2006·2 cites·15 claims
- 2048US8460958B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodGOTO OSAMU·Filed 2011·Granted Jun 11, 2013·0 cites·5 claims
- 2148US6682991B1Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor deviceSONY CORP·Filed 1999·Granted Jan 27, 2004·14 cites·31 claims
- 2248US2007064758A1Laser diode and laser diode deviceSONY CORP·Filed 2006·Application pending·0 cites
- 2346US2011080932A1Laser diode and laser diode deviceSONY CORP·Filed 2010·Application pending·0 cites
- 2445US2005040409A1Semiconductor light emitting device and its manufacturing methodFiled 2004·Application pending·0 cites
- 2543US2005000407A1Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereofSONY CORP·Filed 2004·Application pending·0 cites
- 2643US2005098791A1Nitride semiconductor, semiconductor device, and manufacturing methods for the sameSONY CORP·Filed 2004·Application pending·0 cites
- 2742US5433170AMetal-organic chemical vapor-phase deposition process for fabricating light-emitting devicesSONY CORP·Filed 1994·Granted Jul 18, 1995·7 cites·20 claims
- 2835US2001025989A1Semiconductor device and method of manufacturing the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →