Inventor · disambiguated record
Tae-Ho Cha
Also filed as: CHA TAE-HO
19 granted patents·10 pending applications·473 citations·filing 2000–2023
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD16HYNIX SEMICONDUCTOR INC6BAEK JONG-MIN1CHA TAE-HO1HYUNDAI ELECTRONICS IND1
Top patents by PatentIndex Score
29 records- 0196US6537901B2Method of manufacturing a transistor in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Mar 25, 2003·146 cites·69 claims
- 0295US8466052B2Method of fabricating semiconductor device having buried wiringBAEK JONG-MIN·Filed 2010·Granted Jun 18, 2013·44 cites·18 claims
- 0395US6586288B2Method of forming dual-metal gates in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jul 1, 2003·119 cites·20 claims
- 0495US6506676B2Method of manufacturing semiconductor devices with titanium aluminum nitride work functionHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jan 14, 2003·98 cites·21 claims
- 0588US11069820B2FinFET devices having active patterns and gate spacers on field insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·2 cites·18 claims
- 0686US6514827B2Method for fabricating a dual metal gate for a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Feb 4, 2003·38 cites·10 claims
- 0776US7759263B2Methods for fabricating improved gate dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·5 cites·16 claims
- 0876US7528042B2Method for fabricating semiconductor devices having dual gate oxide layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted May 5, 2009·4 cites·4 claims
- 0968US7928498B2Gate structures in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 19, 2011·3 cites·2 claims
- 1065US6514826B1Method of forming a gate electrode in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Feb 4, 2003·9 cites·20 claims
- 1162US8404576B2Methods of forming a gate structureCHA TAE-HO·Filed 2011·Granted Mar 26, 2013·2 cites·3 claims
- 1257US2024395887A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1356US2024363685A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1454US10658249B2Methods for fabricating finFET devices having gate spacers on field insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 19, 2020·0 cites·16 claims
- 1554US7157339B2Method for fabricating semiconductor devices having dual gate oxide layersHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 2, 2007·3 cites·11 claims
- 1651US7989892B2Gate structure, and semiconductor device having a gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 2, 2011·0 cites·9 claims
- 1750US7781849B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·0 cites·16 claims
- 1847US7879737B2Methods for fabricating improved gate dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 1, 2011·0 cites·12 claims
- 1944US2007052043A1Multilayer gate electrode, semiconductor device having the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2043US9412842B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 9, 2016·0 cites·20 claims
- 2143US7518214B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 14, 2009·0 cites·12 claims
- 2243US2006292784A1Methods of Forming Integrated Circuit Devices Including Memory Cell Gates and High Voltage Transistor Gates Using Plasma Re-OxidationSOHN WOONG H·Filed 2006·Application pending·0 cites
- 2342US2008093663A1Nonvolatile memory device and method for forming the sameLEE JANG-HEE·Filed 2007·Application pending·0 cites
- 2441US7585787B2Semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·0 cites·14 claims
- 2541US2008093660A1Flash memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2641US2008073692A1Semiconductor chip and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2740US2008121983A1Gate and method of forming the same, and memory device and method of manufacturing the sameSEONG GEUM-JUNG·Filed 2006·Application pending·0 cites
- 2839US2008200031A1Method of fabricating gate electrode having polysilicon film and wiring metal filmSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2935US2012034749A1Method for manufacturing a strained semiconductor deviceLIM KWAN-YONG·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →