Inventor · disambiguated record
Tae-Hee Choe
Also filed as: CHOE TAE-HEE
15 granted patents·1 pending application·563 citations·filing 2000–2007
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15
Top patents by PatentIndex Score
16 records- 0199US7642140B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·135 cites·10 claims
- 0297US6633066B1CMOS integrated circuit devices and substrates having unstrained silicon active layersSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 14, 2003·124 cites·12 claims
- 0394US7195987B2Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·26 cites·17 claims
- 0491US6670677B2SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereonSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·45 cites·15 claims
- 0587US6518645B2SOI-type semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 11, 2003·44 cites·16 claims
- 0685US6605847B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 12, 2003·32 cites·10 claims
- 0783US6693013B2Semiconductor transistor using L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·29 cites·21 claims
- 0882US6524902B2Method of manufacturing CMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 25, 2003·26 cites·11 claims
- 0980US6914301B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·20 cites·19 claims
- 1080US6881621B2Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·19 cites·24 claims
- 1178US6580134B1Field effect transistors having elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 17, 2003·22 cites·26 claims
- 1274US6794306B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 21, 2004·16 cites·7 claims
- 1364US6750532B2CMOS semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 15, 2004·9 cites·8 claims
- 1462US6881630B2Methods for fabricating field effect transistors having elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·9 cites·17 claims
- 1559US6917085B2Semiconductor transistor using L-shaped spacerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 12, 2005·7 cites·4 claims
- 1637US2002192930A1Method of forming a single crystalline silicon pattern utilizing a structural selective epitaxial growth technique and a selective silicon etching techniqueFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →