Inventor · disambiguated record
Tae-Min Eom
Also filed as: EOM TAE MIN
7 granted patents·2 pending applications·49 citations·filing 2003–2023
83Inventor score
Top patents by PatentIndex Score
9 records- 0186US7186280B2Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 6, 2007·14 cites·17 claims
- 0280US7427573B2Forming composite metal oxide layer with hafnium oxide and titanium oxideSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 23, 2008·6 cites·13 claims
- 0372US6803241B2Method of monitoring contact hole of integrated circuit using corona chargesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 12, 2004·19 cites·8 claims
- 0467US8138057B2Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layerLEE JUNG-HO·Filed 2008·Granted Mar 20, 2012·2 cites·20 claims
- 0556US2025050101A1High-frequency skin care deviceFOUR S TECH CO LTD·Filed 2023·Application pending·0 cites
- 0652US6927077B2Method and apparatus for measuring contamination of a semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·4 cites·21 claims
- 0748US7310140B2Method and apparatus for inspecting a wafer surfaceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 18, 2007·2 cites·21 claims
- 0847US6869215B2Method and apparatus for detecting contaminants in ion-implanted waferSAMSUNG ELECTRIC·Filed 2003·Granted Mar 22, 2005·2 cites·15 claims
- 0943US2007188185A1Method of inspecgin a leakage current characteristic of a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →