Inventor · disambiguated record
Takashi Eshita
Also filed as: ESHITA TAKASHI
17 granted patents·597 citations·filing 1988–1999
96Inventor score
Files withFUJITSU LTD17
Top patents by PatentIndex Score
17 records- 0193US4855254AMethod of growing a single crystalline β-SiC layer on a silicon substrateFUJITSU LTD·Filed 1988·Granted Aug 8, 1989·71 cites·12 claims
- 0282US5144379ASemiconductor device having a group iii-v epitaxial semiconductor layer on a substrateFUJITSU LTD·Filed 1991·Granted Sep 1, 1992·87 cites·9 claims
- 0380US5103285ASilicon carbide barrier between silicon substrate and metal layerFUJITSU LTD·Filed 1988·Granted Apr 7, 1992·40 cites·8 claims
- 0480US4876219AMethod of forming a heteroepitaxial semiconductor thin film using amorphous buffer layersFUJITSU LTD·Filed 1989·Granted Oct 24, 1989·52 cites·8 claims
- 0576US5270224AMethod of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1992·Granted Dec 14, 1993·41 cites·5 claims
- 0675US5111266ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1991·Granted May 5, 1992·38 cites·9 claims
- 0773US6191441B1Ferroelectric memory device and its drive methodFUJITSU LTD·Filed 1998·Granted Feb 20, 2001·33 cites·20 claims
- 0871US6046929AMemory device with two ferroelectric capacitors per one cellFUJITSU LTD·Filed 1999·Granted Apr 4, 2000·29 cites·21 claims
- 0969US5082695AMethod of fabricating an x-ray exposure maskFUJITSU LTD·Filed 1989·Granted Jan 21, 1992·19 cites·11 claims
- 1068US4994413AMethod of manufacturing a semiconductor device having a silicon carbide layerFUJITSU LTD·Filed 1989·Granted Feb 19, 1991·33 cites·12 claims
- 1166US5834362AMethod of making a device having a heteroepitaxial substrateFUJITSU LTD·Filed 1996·Granted Nov 10, 1998·32 cites·28 claims
- 1266US5518937ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1995·Granted May 21, 1996·26 cites·2 claims
- 1361US5019874ASemiconductor device having an epitaxial layer grown heteroepitaxially on an underlying substrateFUJITSU LTD·Filed 1990·Granted May 28, 1991·35 cites·11 claims
- 1460US5402748AMethod of growing a compound semiconductor filmFUJITSU LTD·Filed 1993·Granted Apr 4, 1995·31 cites·7 claims
- 1544US4997787AMethod for fabricating a semiconductor film which is electrically isolated from a substrateFUJITSU LTD·Filed 1989·Granted Mar 5, 1991·9 cites·14 claims
- 1641US6188090B1Semiconductor device having a heteroepitaxial substrateFUJITSU LTD·Filed 1998·Granted Feb 13, 2001·9 cites·12 claims
- 1740US5057880ASemiconductor device having a heteroepitaxial substrateFUJITSU LTD·Filed 1990·Granted Oct 15, 1991·12 cites·12 claims
Join the waitlist — get patent alerts
Get an alert when Takashi Eshita files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →