Inventor · disambiguated record
Tatsuhiko Fujihira
Also filed as: FUJIHIRA TATSUHIKO
95 granted patents·2 pending applications·3,905 citations·filing 1988–2025
99Inventor score
Files withFUJI ELECTRIC CO LTD86FUJI ELEC DEVICE TECH CO LTD6FUJI ELECTRIC HOLDINGS3FUJI ELECTRIC CO LTDS1SUGI AKIO1
Top patents by PatentIndex Score
97 records- 0198US6294818B1Parallel-stripe type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2000·Granted Sep 25, 2001·165 cites·4 claims
- 0298US6097063ASemiconductor device having a plurality of parallel drift regionsFUJI ELECTRIC CO LTD·Filed 1997·Granted Aug 1, 2000·268 cites·2 claims
- 0396US6724042B2Super-junction semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2001·Granted Apr 20, 2004·115 cites·25 claims
- 0496US6291856B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1999·Granted Sep 18, 2001·214 cites·6 claims
- 0595US6677643B2Super-junction semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2001·Granted Jan 13, 2004·108 cites·9 claims
- 0695US6610572B1Semiconductor device and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2000·Granted Aug 26, 2003·74 cites·9 claims
- 0795US6551909B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2000·Granted Apr 22, 2003·90 cites·3 claims
- 0895US6475864B1Method of manufacturing a super-junction semiconductor device with an conductivity type layerFUJI ELECTRIC CO LTD·Filed 2000·Granted Nov 5, 2002·98 cites·21 claims
- 0995US5422593ACurrent-limiting circuitFUJI ELECTRIC CO LTD·Filed 1993·Granted Jun 6, 1995·101 cites·50 claims
- 1094US6621132B2Semiconductor deviceFUJI ELECTRIC CO LTDS·Filed 2001·Granted Sep 16, 2003·148 cites·19 claims
- 1193US6674126B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Jan 6, 2004·74 cites·21 claims
- 1292US6696728B2Super-junction semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Feb 24, 2004·73 cites·28 claims
- 1392US6683347B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1999·Granted Jan 27, 2004·94 cites·34 claims
- 1492US6611021B1Semiconductor device and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2000·Granted Aug 26, 2003·59 cites·4 claims
- 1592US5973359AMOS type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1998·Granted Oct 26, 1999·127 cites·6 claims
- 1691US9048250B2Method of manufacturing a super-junction semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Jun 2, 2015·13 cites·12 claims
- 1791US6903418B2Semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2003·Granted Jun 7, 2005·58 cites·26 claims
- 1891US5621601AOver-current protection apparatus for transistorFUJI ELECTRIC CO LTD·Filed 1994·Granted Apr 15, 1997·82 cites·9 claims
- 1990US6673679B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2000·Granted Jan 6, 2004·50 cites·9 claims
- 2090US6566709B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted May 20, 2003·36 cites·5 claims
- 2190US5970964ACircuit device for igniting internal combustion engine and semiconductor device for igniting internal combustion engineFUJI ELECTRIC CO LTD·Filed 1996·Granted Oct 26, 1999·43 cites·9 claims
- 2289US6693323B2Super-junction semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Feb 17, 2004·42 cites·17 claims
- 2388US7002205B2Super-junction semiconductor device and method of manufacturing the sameFUJI ELEC DEVICE TECH CO LTD·Filed 2003·Granted Feb 21, 2006·39 cites·4 claims
- 2488US6700141B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2001·Granted Mar 2, 2004·47 cites·35 claims
- 2588US6677626B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1999·Granted Jan 13, 2004·90 cites·19 claims
- 2688US6175143B1Schottky barrierFUJI ELECTRIC CO LTD·Filed 1998·Granted Jan 16, 2001·47 cites·2 claims
- 2788US5757046AMOS type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1996·Granted May 26, 1998·79 cites·33 claims
- 2888US5159516AOvercurrent-detection circuitFUJI ELECTRIC CO LTD·Filed 1992·Granted Oct 27, 1992·70 cites·15 claims
- 2988US5070322AAn overheating detection circuit including a reversely biased junction having a temperature dependent reverse leakage current for detecting overheating of a power integrated circuitFUJI ELECTRIC CO LTD·Filed 1990·Granted Dec 3, 1991·59 cites·10 claims
- 3087US5723890AMOS type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1996·Granted Mar 3, 1998·74 cites·13 claims
- 3186US6720615B2Vertical-type MIS semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Apr 13, 2004·27 cites·3 claims
- 3285US5162966ASemiconductor device having a surge protecting elementFUJI ELECTRIC CO LTD·Filed 1991·Granted Nov 10, 1992·63 cites·10 claims
- 3384US6756636B2Lateral super-junction semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2001·Granted Jun 29, 2004·31 cites·9 claims
- 3483US7276771B2Diode and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2006·Granted Oct 2, 2007·6 cites·1 claims
- 3582US7112865B2Diode and method for manufacturing the sameFUJI ELECTRIC HOLDINGS·Filed 2005·Granted Sep 26, 2006·6 cites·2 claims
- 3682US7042046B2Super-junction semiconductor device and method of manufacturing the sameFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted May 9, 2006·24 cites·2 claims
- 3782US6734496B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted May 11, 2004·21 cites·3 claims
- 3881US6977425B2Semiconductor device having a lateral MOSFET and combined IC using the sameFUJI ELECTRIC CO LTD·Filed 2003·Granted Dec 20, 2005·24 cites·14 claims
- 3981US6762097B2Semiconductor device and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2003·Granted Jul 13, 2004·20 cites·5 claims
- 4081US6323539B1High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistorFUJI ELECTRIC CO LTD·Filed 2000·Granted Nov 27, 2001·34 cites·43 claims
- 4181US6246092B1High breakdown voltage MOS semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 1998·Granted Jun 12, 2001·41 cites·22 claims
- 4281US5576655AHigh-withstand-voltage integrated circuit for driving a power semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1995·Granted Nov 19, 1996·52 cites·13 claims
- 4380US6900109B2Method of manufacturing a semiconductor device with a vertical drain drift layer of the alternating-conductivity-typeFUJI ELECTRIC CO LTD·Filed 2003·Granted May 31, 2005·24 cites·16 claims
- 4480US6724040B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Apr 20, 2004·18 cites·14 claims
- 4580US6576935B2Bidirectional semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2001·Granted Jun 10, 2003·28 cites·26 claims
- 4680US5031009AConductivity modulation semiconductor with no negative resistance characteristicsFUJI ELECTRIC CO LTD·Filed 1988·Granted Jul 9, 1991·38 cites·8 claims
- 4779US7002211B2Lateral super-junction semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2004·Granted Feb 21, 2006·21 cites·15 claims
- 4879US6586801B2Semiconductor device having breakdown voltage limiter regionsFUJI ELECTRIC CO LTD·Filed 2001·Granted Jul 1, 2003·27 cites·10 claims
- 4979US6221688B1Diode and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1999·Granted Apr 24, 2001·27 cites·12 claims
- 5078US6627948B1Vertical layer type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2000·Granted Sep 30, 2003·19 cites·8 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →