Inventor · disambiguated record
Takasuke Hashimoto
Also filed as: HASHIMOTO TAKASUKE
19 granted patents·2 pending applications·217 citations·filing 1994–2017
94Inventor score
Files withNEC CORP9RENESAS ELECTRONICS CORP7NEC ELECTRONICS CORP3OKUSHIMA MOTOTSUGU1UCHIDA SHINICHI1
Top patents by PatentIndex Score
21 records- 0191US8395234B2Semiconductor deviceOKUSHIMA MOTOTSUGU·Filed 2010·Granted Mar 12, 2013·12 cites·7 claims
- 0283US8907460B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Dec 9, 2014·6 cites·17 claims
- 0380US5557118AHetero-junction type bipolar transistorNEC CORP·Filed 1994·Granted Sep 17, 1996·47 cites·3 claims
- 0474US8310034B2Semiconductor deviceUCHIDA SHINICHI·Filed 2010·Granted Nov 13, 2012·5 cites·21 claims
- 0574US6337251B1Method of manufacturing semiconductor device with no parasitic barrierNEC CORP·Filed 2000·Granted Jan 8, 2002·20 cites·20 claims
- 0669US8786048B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Jul 22, 2014·2 cites·14 claims
- 0768US6001711AProcess of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layerNEC CORP·Filed 1998·Granted Dec 14, 1999·34 cites·10 claims
- 0866US6570241B2Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improvedNEC ELECTRONICS CORP·Filed 2001·Granted May 27, 2003·11 cites·13 claims
- 0961US5856702APolysilicon resistor and method of producing sameNEC CORP·Filed 1997·Granted Jan 5, 1999·21 cites·10 claims
- 1056US9245840B2Semiconductor device having an inductor surrounds the internal circuitRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 26, 2016·0 cites·17 claims
- 1155US5523614ABipolar transistor having enhanced high speed operation through reduced base leakage currentNEC CORP·Filed 1994·Granted Jun 4, 1996·17 cites·5 claims
- 1253US5475257ASemiconductor device having an improved low resistive contactNEC CORP·Filed 1994·Granted Dec 12, 1995·15 cites·2 claims
- 1351US6680234B2Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improvedNEC ELECTRONICS CORP·Filed 2002·Granted Jan 20, 2004·4 cites·12 claims
- 1450US9632119B2Sensor device having inductors for detecting power flowing through a power lineRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 25, 2017·0 cites·6 claims
- 1549US9875962B2Sensor device having inductors, analog and logic circuits for detecting power flowing through a powerlineRENESAS ELECTRONICS CORP·Filed 2017·Granted Jan 23, 2018·0 cites·6 claims
- 1648US9529022B2Sensor device with inductorsRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 27, 2016·0 cites·3 claims
- 1746US2018108609A1Sensor deviceRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 1845US6028344ABipolar transistor on a semiconductor-on-insulator substrateNEC CORP·Filed 1998·Granted Feb 22, 2000·13 cites·8 claims
- 1944US2010009510A1Method of manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 2042US5438014AMethod of manufacturing semiconductor deviceNEC CORP·Filed 1994·Granted Aug 1, 1995·8 cites·5 claims
- 2132US6087675ASemiconductor device with an insulation film having emitter contact windows filled with polysilicon filmNEC CORP·Filed 1998·Granted Jul 11, 2000·2 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →