Inventor · disambiguated record
Takayoshi Higashino
Also filed as: HIGASHINO TAKAYOSHI
7 granted patents·74 citations·filing 1992–2002
85Inventor score
Files withSANYO ELECTRIC CO7
Top patents by PatentIndex Score
7 records- 0181US6580107B2Compound semiconductor device with depletion layer stop regionSANYO ELECTRIC CO·Filed 2001·Granted Jun 17, 2003·28 cites·30 claims
- 0248US5324969AHigh-breakdown voltage field-effect transistorSANYO ELECTRIC CO·Filed 1992·Granted Jun 28, 1994·13 cites·13 claims
- 0347US5350709AMethod of doping a group III-V compound semiconductorSANYO ELECTRIC CO·Filed 1993·Granted Sep 27, 1994·17 cites·21 claims
- 0446US6867115B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Mar 15, 2005·2 cites·9 claims
- 0543US6873828B2Compound semiconductor switching device for high frequency switchingSANYO ELECTRIC CO·Filed 2001·Granted Mar 29, 2005·3 cites·11 claims
- 0636US5557141AMethod of doping, semiconductor device, and method of fabricating semiconductor deviceSANYO ELECTRIC CO·Filed 1994·Granted Sep 17, 1996·8 cites·16 claims
- 0730US5614814ANegative voltage genarating circuitSANYO ELECTRIC CO·Filed 1994·Granted Mar 25, 1997·3 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →