Inventor · disambiguated record
Taku Horii
Also filed as: HORII TAKU
31 granted patents·6 pending applications·43 citations·filing 2008–2020
94Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES30HORII TAKU4KITABAYASHI HIROYUKI1MIYAZAKI TOMIHITO1SASAKI MAKOTO1
Top patents by PatentIndex Score
37 records- 0189US9263527B2Silicon carbide semiconductor device and method of manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 16, 2016·10 cites·4 claims
- 0285US9768125B2Method of manufacturing semiconductor device with a metal layer along a step portionSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Sep 19, 2017·4 cites·10 claims
- 0380US9728628B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Aug 8, 2017·3 cites·8 claims
- 0476US9786741B2Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 10, 2017·3 cites·20 claims
- 0574US9177856B2Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Nov 3, 2015·4 cites·3 claims
- 0673US8609513B2Method for manufacturing semiconductor deviceHORII TAKU·Filed 2011·Granted Dec 17, 2013·4 cites·10 claims
- 0771US8581359B2Schottky barrier diodeHORII TAKU·Filed 2008·Granted Nov 12, 2013·5 cites·6 claims
- 0870US8901698B2Schottky barrier diode and method for manufacturing schottky barrier diodeSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Dec 2, 2014·2 cites·14 claims
- 0968US9613809B2Method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 4, 2017·2 cites·12 claims
- 1065US10050109B2Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 14, 2018·1 cites·3 claims
- 1164US9691608B2Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 27, 2017·1 cites·16 claims
- 1263US8502337B2Schottky barrier diode and method for manufacturing Schottky barrier diodeHORII TAKU·Filed 2009·Granted Aug 6, 2013·2 cites·12 claims
- 1357US9728607B2Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 8, 2017·1 cites·16 claims
- 1456US12136652B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Nov 5, 2024·0 cites·18 claims
- 1554US8916462B2Method for manufacturing semiconductor deviceKITABAYASHI HIROYUKI·Filed 2012·Granted Dec 23, 2014·1 cites·17 claims
- 1653US10340344B2Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Jul 2, 2019·0 cites·16 claims
- 1753US9905653B2Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 27, 2018·0 cites·4 claims
- 1853US8815716B2Method of producing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Aug 26, 2014·0 cites·2 claims
- 1952US10468358B2Semiconductor device with metal layer along a step portionSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Nov 5, 2019·0 cites·12 claims
- 2050US9818608B2Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device where depression supression layer is formed on backside surface of base substrate opposite to main surface on which epitaxial layer is formedSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Nov 14, 2017·0 cites·9 claims
- 2149US11398558B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jul 26, 2022·0 cites·6 claims
- 2249US9653297B2Method of manufacturing silicon carbide semiconductor device by forming metal-free protection filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted May 16, 2017·0 cites·7 claims
- 2348US9691616B2Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 27, 2017·0 cites·7 claims
- 2448US8614446B2Semiconductor device and method of producing sameMIYAZAKI TOMIHITO·Filed 2009·Granted Dec 24, 2013·0 cites·3 claims
- 2547US9741799B2Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 22, 2017·0 cites·11 claims
- 2647US9583346B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 28, 2017·0 cites·10 claims
- 2746US9966437B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted May 8, 2018·0 cites·7 claims
- 2845US9806167B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 31, 2017·0 cites·1 claims
- 2945US2016189955A1Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 3044US9048093B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Jun 2, 2015·0 cites·25 claims
- 3142US8802552B2Method for manufacturing semiconductor deviceHORII TAKU·Filed 2012·Granted Aug 12, 2014·0 cites·3 claims
- 3242US2013292702A1Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 3341US9472635B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 18, 2016·0 cites·11 claims
- 3440US2013017671A1Method for manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 3539US2013149853A1Method for manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 3638US2012126251A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceSASAKI MAKOTO·Filed 2011·Application pending·0 cites
- 3737US2014103365A1Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →