Inventor · disambiguated record
Tahir Hussain
Also filed as: HUSSAIN TAHIR
43 granted patents·3 pending applications·967 citations·filing 1998–2022
98Inventor score
Top patents by PatentIndex Score
46 records- 0196US9662498B1Scalable high-density wireless neuroelectric sensor and stimulator arrayHRL LAB LLC·Filed 2015·Granted May 30, 2017·15 cites·19 claims
- 0294US9087854B1Thermal management for heterogeneously integrated technologyHRL LAB LLC·Filed 2014·Granted Jul 21, 2015·17 cites·26 claims
- 0393US11562984B1Integrated mechanical aids for high accuracy alignable-electrical contactsHRL LAB LLC·Filed 2020·Granted Jan 24, 2023·5 cites·17 claims
- 0493US9880148B1Scalable high-density wireless neuroelectric sensor and stimulator arrayHRL LAB LLC·Filed 2017·Granted Jan 30, 2018·7 cites·13 claims
- 0593US6816720B2Call-based provisioning of mobile equipment location informationERICSSON INC·Filed 2001·Granted Nov 9, 2004·125 cites·24 claims
- 0692US7043231B2System, method and apparatus for polling telecommunications nodes for real-time informationERICSSON INC·Filed 2001·Granted May 9, 2006·100 cites·16 claims
- 0791US9515068B1Monolithic integration of GaN and InP componentsHRL LAB LLC·Filed 2013·Granted Dec 6, 2016·12 cites·10 claims
- 0891US7181529B2Business to business engine and system for facilitating information interexchange using realtime dataERICSSON INC·Filed 2001·Granted Feb 20, 2007·111 cites·9 claims
- 0990US7598131B1High power-low noise microwave GaN heterojunction field effect transistorHRL LAB LLC·Filed 2008·Granted Oct 6, 2009·20 cites·42 claims
- 1090US6725048B2Traffic congestion management when providing realtime information to service providersERICSSON INC·Filed 2001·Granted Apr 20, 2004·139 cites·16 claims
- 1189US12057429B1Temporary bonding structures for die-to-die and wafer-to-wafer bondingHRL LAB LLC·Filed 2021·Granted Aug 6, 2024·2 cites·11 claims
- 1289US9536844B1Transient antennas and transient electronicsHRL LAB LLC·Filed 2015·Granted Jan 3, 2017·7 cites·20 claims
- 1386US8728884B1Enhancement mode normally-off gallium nitride heterostructure field effect transistorHUSSAIN TAHIR·Filed 2009·Granted May 20, 2014·13 cites·10 claims
- 1485US8587037B1Test structure to monitor the in-situ channel temperature of field effect transistorsLI JAMES CHINGWEI·Filed 2009·Granted Nov 19, 2013·8 cites·14 claims
- 1584US7569872B1Bipolar transistors with low parasitic lossesHRL LAB LLC·Filed 2005·Granted Aug 4, 2009·12 cites·30 claims
- 1683US6198935B1System and method for time of arrival positioning measurements based upon network characteristicsERICSSON INC·Filed 1998·Granted Mar 6, 2001·116 cites·24 claims
- 1781US7368765B1Bipolar transistors with low parasitic lossesHRL LAB LLC·Filed 2005·Granted May 6, 2008·9 cites·33 claims
- 1880US9450022B1Memristor devices and fabricationWHEELER DANA C·Filed 2012·Granted Sep 20, 2016·8 cites·5 claims
- 1980US7470941B2High power-low noise microwave GaN heterojunction field effect transistorHRL LAB LLC·Filed 2002·Granted Dec 30, 2008·27 cites·33 claims
- 2079US7868335B1Modulation doped super-lattice sub-collector for high-performance HBTs and BJTsHRL LAB LLC·Filed 2008·Granted Jan 11, 2011·7 cites·41 claims
- 2178US8178946B1Modulation doped super-lattice base for heterojunction bipolar transistorsLI JAMES CHINGWEI·Filed 2009·Granted May 15, 2012·6 cites·22 claims
- 2278US6852615B2Ohmic contacts for high electron mobility transistors and a method of making the sameHRL LAB LLC·Filed 2003·Granted Feb 8, 2005·27 cites·31 claims
- 2376US7098490B2GaN DHFETHRL LAB LLC·Filed 2004·Granted Aug 29, 2006·20 cites·20 claims
- 2469US12444712B1Integrated mechanical aids for high accuracy alignable-electrical contactsHRL LAB LLC·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 2569US6884704B2Ohmic metal contact and channel protection in GaN devices using an encapsulation layerHRL LAB LLC·Filed 2003·Granted Apr 26, 2005·10 cites·24 claims
- 2667US7494887B1Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit timeHRL LAB LLC·Filed 2004·Granted Feb 24, 2009·11 cites·20 claims
- 2761US8957455B1Modulation doped super-lattice base for heterojunction bipolar transistorsLI JAMES CHINGWEI·Filed 2012·Granted Feb 17, 2015·1 cites·19 claims
- 2857US8030688B2Ohmic metal contact protection using an encapsulation layerHRL LAB LLC·Filed 2009·Granted Oct 4, 2011·0 cites·21 claims
- 2957US6591105B1System and method for managing access in cellular network with multiple profilesERICSSON INC·Filed 1999·Granted Jul 8, 2003·35 cites·25 claims
- 3056US9383266B1Test structure to monitor the in-situ channel temperature of field effect transistorsHRL LAB LLC·Filed 2013·Granted Jul 5, 2016·0 cites·16 claims
- 3156US8575659B1Carbon-beryllium combinationally doped semiconductorBUI STEVEN S·Filed 2011·Granted Nov 5, 2013·1 cites·20 claims
- 3254US9190534B1Enhancement mode normally-off gallium nitride heterostructure field effect transistorHRL LAB LLC·Filed 2014·Granted Nov 17, 2015·0 cites·12 claims
- 3354US6163700ASystem and method for adaptive reservation of radio resources for cells belonging to localized service areaERICSSON INC·Filed 1998·Granted Dec 19, 2000·34 cites·32 claims
- 3453US9953796B2Nano vacuum gap device with a gate-all-around cathodeHRL LAB LLC·Filed 2016·Granted Apr 24, 2018·0 cites·31 claims
- 3549US9691761B1Monolithic integration of GaN and InP componentsHRL LAB LLC·Filed 2016·Granted Jun 27, 2017·0 cites·11 claims
- 3648US8525301B1Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit timeHUSSAIN TAHIR·Filed 2008·Granted Sep 3, 2013·0 cites·19 claims
- 3748US6366781B1System and method for time of arrival based positioning during handoverERICSSON INC·Filed 1999·Granted Apr 2, 2002·22 cites·16 claims
- 3848US6173180B1System and method of providing preferential access to subscribers of localized service areas in a radio telecommunications networkERICSSON INC·Filed 1999·Granted Jan 9, 2001·22 cites·11 claims
- 3947US7566916B2Ohmic metal contact and channel protection in GaN devices using an encapsulation layerHRL LAB LLC·Filed 2004·Granted Jul 28, 2009·1 cites·14 claims
- 4040US7229874B2Method and apparatus for allowing formation of self-aligned base contactsHRL LAB LLC·Filed 2004·Granted Jun 12, 2007·1 cites·9 claims
- 4139US2002037744A1Telecommunications device for sending realtime information to a business-to-business engine for facilitating services to the telecommunications deviceFiled 2001·Application pending·0 cites
- 4239US2002037709A1System, method and apparatus for facilitating the receipt of realtime information from telecommunications nodesFiled 2001·Application pending·0 cites
- 4337US6680236B2Ion-implantation and shallow etching to produce effective edge termination in high-voltage heterojunction bipolar transistorsRAYTHEON CO·Filed 2002·Granted Jan 20, 2004·0 cites·7 claims
- 4436US6351644B1System, method and apparatus to prepare base transceiver station for intra-cell asynchronous positioning handoverERICSSON INC·Filed 1999·Granted Feb 26, 2002·9 cites·13 claims
- 4535US2002037722A1Facilitating realtime information interexchange between a telecommunications network and a service providerFiled 2001·Application pending·0 cites
- 4632US6397071B1System and method for configuring generic equipment measurement units with a mobile services switching centerERICSSON INC·Filed 1999·Granted May 28, 2002·7 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →