Inventor · disambiguated record
Tai-Wei Hwang
Also filed as: HWANG TAI-WEI
5 granted patents·3 pending applications·7 citations·filing 2018–2025
71Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8
Top patents by PatentIndex Score
8 records- 0191US10504789B1Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 0278US12142531B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 0378US2025359167A1Gate Stack for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0476US11075275B2Metal gate fill for short-channel and long-channel semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·2 cites·20 claims
- 0569US2025072051A1Gate Stack for Multigate DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0666US11322411B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 3, 2022·0 cites·20 claims
- 0766US11302582B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 12, 2022·0 cites·20 claims
- 0859US2025301764A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →