Inventor · disambiguated record
Tatsuro Inoue
Also filed as: INOUE TATSURO
8 granted patents·2 pending applications·299 citations·filing 1991–2002
89Inventor score
Files withNEC CORP8
Top patents by PatentIndex Score
10 records- 0190US5559048AMethod of making a double layered floating gate EPROM with trench isolationNEC CORP·Filed 1994·Granted Sep 24, 1996·86 cites·5 claims
- 0288US5321286ANon-volatile semiconductor memory device having thin film memory transistors stacked over associated selecting transistorsNEC CORP·Filed 1992·Granted Jun 14, 1994·90 cites·1 claims
- 0375US5191551ANon-volatile semiconductor memory device with transistor paralleling floating gate transistorNEC CORP·Filed 1991·Granted Mar 2, 1993·39 cites·4 claims
- 0466US5449634AMethod of fabricating non-volatile semiconductor memory deviceNEC CORP·Filed 1993·Granted Sep 12, 1995·26 cites·7 claims
- 0560US6207509B1Method of manufacturing a semiconductor deviceNEC CORP·Filed 1999·Granted Mar 27, 2001·20 cites·15 claims
- 0657US5487034ASemiconductor memory device and method for writing data thereinNEC CORP·Filed 1994·Granted Jan 23, 1996·18 cites·9 claims
- 0753US5432110AMethod for fabricating non-volatile semiconductor memory device having two-layered gate structure transistorNEC CORP·Filed 1993·Granted Jul 11, 1995·16 cites·4 claims
- 0852US6391701B1Semiconductor device and process of fabrication thereofNEC CORP·Filed 2000·Granted May 21, 2002·4 cites·10 claims
- 0931US2002096700A1Non-volatile semiconductor memory device and method of manufacturing the sameFiled 2002·Application pending·0 cites
- 1031US2001032996A1Nonvolatile semiconductor memory deviceFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →