Inventor · disambiguated record
Takashi Ipposhi
Also filed as: IPPOSHI TAKASHI
113 granted patents·21 pending applications·2,844 citations·filing 1989–2019
99Inventor score
Files withRENESAS TECH CORP70MITSUBISHI ELECTRIC CORP56RENESAS ELECTRONICS CORP3HIRANO YUICHI1MAEGAWA SHIGETO1
Top patents by PatentIndex Score
134 records- 0199US6864534B2Semiconductor waferRENESAS TECH CORP·Filed 2001·Granted Mar 8, 2005·282 cites·10 claims
- 0299US5006913AStacked type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Apr 9, 1991·305 cites·4 claims
- 0398US5355022AStacked-type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 11, 1994·347 cites·10 claims
- 0495US6452249B1Inductor with patterned ground shieldMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 17, 2002·89 cites·19 claims
- 0593US7541644B2Semiconductor device with effective heat-radiationRENESAS TECH CORP·Filed 2004·Granted Jun 2, 2009·71 cites·10 claims
- 0693US6693324B2Semiconductor device having a thin film transistor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 17, 2004·118 cites·15 claims
- 0793US6611041B2Inductor with patterned ground shieldMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 26, 2003·59 cites·10 claims
- 0892US5357365ALaser beam irradiating apparatus enabling uniform laser annealingMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Oct 18, 1994·93 cites·24 claims
- 0991US6255146B1Thin film transistor and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 3, 2001·39 cites·3 claims
- 1090US6495898B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 17, 2002·47 cites·8 claims
- 1189US7358555B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 15, 2008·16 cites·22 claims
- 1288US5841171ASOI Semiconductor devicesMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 24, 1998·64 cites·8 claims
- 1388US5504376AStacked-type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Apr 2, 1996·84 cites·11 claims
- 1487US6875663B2Semiconductor device having a trench isolation and method of fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Apr 5, 2005·29 cites·32 claims
- 1587US5910672ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 8, 1999·74 cites·6 claims
- 1685US7453135B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Nov 18, 2008·9 cites·10 claims
- 1785US5514880AField effect thin-film transistor for an SRAM with reduced standby currentMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 7, 1996·56 cites·15 claims
- 1884US7402865B2Semiconductor device including a contact connected to the body and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Jul 22, 2008·9 cites·10 claims
- 1984US7067881B2Semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Jun 27, 2006·29 cites·6 claims
- 2083US6794717B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Sep 21, 2004·23 cites·11 claims
- 2181US6064090ASemiconductor device having a portion of gate electrode formed on an insulating substrateMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 16, 2000·44 cites·14 claims
- 2281US5736438AField effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 7, 1998·46 cites·4 claims
- 2381US5061655AMethod of producing SOI structuresMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 29, 1991·91 cites·10 claims
- 2480US6479330B2Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 12, 2002·22 cites·11 claims
- 2579US7307318B2Semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Dec 11, 2007·5 cites·9 claims
- 2679US6271065B1Method directed to the manufacture of an SOI deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·22 cites·18 claims
- 2778US7297585B2Method of manufacturing semiconductor device having impurity region under isolation regionRENESAS TECH CORP·Filed 2006·Granted Nov 20, 2007·5 cites·6 claims
- 2877US7300847B2MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thicknessRENESAS TECH CORP·Filed 2005·Granted Nov 27, 2007·5 cites·7 claims
- 2976US8067804B2Semiconductor device having an SOI structure, manufacturing method thereof, and memory circuitMAEGAWA SHIGETO·Filed 2005·Granted Nov 29, 2011·9 cites·3 claims
- 3076US6975041B2Semiconductor storage device having high soft-error immunityRENESAS TECH CORP·Filed 2004·Granted Dec 13, 2005·28 cites·11 claims
- 3176US6426543B1Semiconductor device including high-frequency circuit with inductorMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 30, 2002·18 cites·4 claims
- 3276US5600154AThin film transistor with particular nitrogen concentrationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 4, 1997·35 cites·1 claims
- 3376US5471086ASemiconductor device having piezo resistanceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 28, 1995·38 cites·11 claims
- 3475US7741679B2Semiconductor device, method of manufacturing same and method of designing sameRENESAS TECH CORP·Filed 2007·Granted Jun 22, 2010·4 cites·8 claims
- 3574US7303950B2Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Dec 4, 2007·4 cites·8 claims
- 3673US7898032B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2007·Granted Mar 1, 2011·5 cites·39 claims
- 3773US7332776B2Semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Feb 19, 2008·3 cites·2 claims
- 3873US6798021B2Transistor having a graded active layer and an SOI based capacitorRENESAS TECH CORP·Filed 2002·Granted Sep 28, 2004·20 cites·6 claims
- 3972US7332793B2Semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Feb 19, 2008·4 cites·5 claims
- 4072US6249026B1MOS Transistor with a buried oxide film containing fluorineMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jun 19, 2001·38 cites·17 claims
- 4171US7675122B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2007·Granted Mar 9, 2010·2 cites·27 claims
- 4271US7535062B2Semiconductor device having SOI structureRENESAS TECH CORP·Filed 2007·Granted May 19, 2009·4 cites·6 claims
- 4371US7382026B2Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Jun 3, 2008·2 cites·7 claims
- 4471US6727572B2Semiconductor device including high frequency circuit with inductorRENESAS TECH CORP·Filed 2003·Granted Apr 27, 2004·12 cites·7 claims
- 4571US6335267B1Semiconductor substrate and method of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 1, 2002·12 cites·15 claims
- 4670US7504291B2MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thicknessRENESAS TECH CORP·Filed 2007·Granted Mar 17, 2009·3 cites·12 claims
- 4770US7352049B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Apr 1, 2008·3 cites·2 claims
- 4870US6596615B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 22, 2003·13 cites·7 claims
- 4969US7553741B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Jun 30, 2009·4 cites·6 claims
- 5069US6958266B2Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Oct 25, 2005·10 cites·10 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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