Inventor · disambiguated record
Takeshi Ishiguro
Also filed as: ISHIGURO TAKESHI
33 granted patents·12 pending applications·167 citations·filing 1973–2024
96Inventor score
Files withICEMOS TECH LIMITED11ICEMOS TECHNOLOGY LTD8SEMICONDUCTOR COMPONENTS IND5DAICEL CHEM3ISHIGURO TAKESHI3
Top patents by PatentIndex Score
45 records- 0186US8946814B2Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gatesICEMOS TECHNOLOGY LTD·Filed 2013·Granted Feb 3, 2015·8 cites·10 claims
- 0286US8580651B2Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill materialISHIGURO TAKESHI·Filed 2007·Granted Nov 12, 2013·14 cites·17 claims
- 0386US7723172B2Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill materialICEMOS TECHNOLOGY LTD·Filed 2008·Granted May 25, 2010·13 cites·20 claims
- 0479US11362042B2Semiconductor device with oxide-nitride stackICEMOS TECH CORPORATION·Filed 2020·Granted Jun 14, 2022·2 cites·28 claims
- 0579US8114751B2Multi-angle rotation for ion implantation of trenches in superjunction devicesISHIGURO TAKESHI·Filed 2010·Granted Feb 14, 2012·4 cites·13 claims
- 0677US8963239B2800 V superjunction deviceICEMOS TECHNOLOGY LTD·Filed 2014·Granted Feb 24, 2015·4 cites·18 claims
- 0776US12230674B2Radiation hardened high voltage superjunction MOSFETICEMOS TECH LIMITED·Filed 2023·Granted Feb 18, 2025·0 cites·27 claims
- 0874US6589845B1Method of forming a semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Jul 8, 2003·21 cites·7 claims
- 0972US11757001B2Radiation hardened high voltage superjunction MOSFETICEMOS TECH LIMITED·Filed 2022·Granted Sep 12, 2023·0 cites·24 claims
- 1072US2024405068A1Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Epitaxial LayerICEMOS TECH LIMITED·Filed 2024·Application pending·0 cites
- 1172US2024405067A1Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Vapor Phase DepositionICEMOS TECH LIMITED·Filed 2024·Application pending·0 cites
- 1270USD558319SHumidifierIDEA INTERNAT CO LTD·Filed 2006·Granted Dec 25, 2007·18 cites·1 claims
- 1369US9318554B2Gate pad and gate feed breakdown voltage enhancementSHORE MICHAEL W·Filed 2014·Granted Apr 19, 2016·2 cites·10 claims
- 1469US6613622B1Method of forming a semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Sep 2, 2003·17 cites·20 claims
- 1568US7846821B2Multi-angle rotation for ion implantation of trenches in superjunction devicesICEMOS TECHNOLOGY LTD·Filed 2009·Granted Dec 7, 2010·2 cites·7 claims
- 1667US5811293AProcesses for producing optically active 2-amino-1-phenylethanol derivatives by reduction of the corresponding ketoneDAICEL CHEM·Filed 1996·Granted Sep 22, 1998·9 cites·3 claims
- 1766US9461109B1Method of forming superjunction high voltage devices using wafer bondingICEMOS TECH LTD·Filed 2015·Granted Oct 4, 2016·2 cites·20 claims
- 1866US9349725B2Stripe orientation for trenches and contact windowsICEMOS TECHNOLOGY LTD·Filed 2014·Granted May 24, 2016·2 cites·19 claims
- 1966US7795045B2Trench depth monitor for semiconductor manufacturingICEMOS TECHNOLOGY LTD·Filed 2009·Granted Sep 14, 2010·2 cites·22 claims
- 2066US6982461B2Lateral FET structure with improved blocking voltage and on resistance performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Jan 3, 2006·13 cites·9 claims
- 2164US9147751B2Methods of manufacturing superjunction devicesICEMOS TECHNOLOGY LTD·Filed 2014·Granted Sep 29, 2015·1 cites·3 claims
- 2264US8041850B2Storage apparatus and data integrity assurance methodHITACHI LTD·Filed 2009·Granted Oct 18, 2011·3 cites·16 claims
- 2363US5629200AProduction of optically active 2-amino-1-phenylethanol derivatives by asymetrical assimilationDAICEL CHEM·Filed 1994·Granted May 13, 1997·6 cites·4 claims
- 2461US11362179B2Radiation hardened high voltage superjunction MOSFETICEMOS TECH LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 2560US12506006B2Semiconductor device and method of direct wafer bonding between semiconductor layer containing similar WBG materialsICEMOS TECH LIMITED·Filed 2022·Granted Dec 23, 2025·0 cites·29 claims
- 2660US9536941B2Gate pad and gate feed breakdown voltage enhancementMICHAEL W SHORE·Filed 2016·Granted Jan 3, 2017·1 cites·10 claims
- 2759US11935839B2Semiconductor device with oxide-nitride stackICEMOS TECH CORPORATION·Filed 2022·Granted Mar 19, 2024·0 cites·34 claims
- 2856USD430597SPrinterCANON KK·Filed 1997·Granted Sep 5, 2000·9 cites·1 claims
- 2956US2025157813A1Semiconductor Device and Method of Forming Silicon Carbide Switch-Back Engineered SubstrateICEMOS TECH LIMITED·Filed 2024·Application pending·0 cites
- 3055US8158004B2Method of manufacturing substances by supercritical fluid chromatographyMIYAZAWA KENICHIRO·Filed 2009·Granted Apr 17, 2012·2 cites·4 claims
- 3151US8012806B2Multi-directional trenching of a die in manufacturing superjunction devicesICEMOS TECHNOLOGY LTD·Filed 2008·Granted Sep 6, 2011·0 cites·15 claims
- 3248US9543380B2Multi-directional trenching of a die in manufacturing superjunction devicesISHIGURO TAKESHI·Filed 2011·Granted Jan 10, 2017·0 cites·5 claims
- 3348US7632760B2Semiconductor device having field stabilization film and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Dec 15, 2009·1 cites·15 claims
- 3446US6555877B2NMOSFET with negative voltage capability formed in P-type substrate and method of making the sameSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Apr 29, 2003·2 cites·7 claims
- 3546US2023207568A1Semiconductor Device and Method for Power MOSFET on Partial SOIICEMOS TECH LIMITED·Filed 2022·Application pending·0 cites
- 3644US2023060866A1Semiconductor Device and Method of Forming Radiation Hardened Substantially Defect Free Silicon Carbide SubstrateICEMOS TECH LIMITED·Filed 2022·Application pending·0 cites
- 3744US2023061775A1Semiconductor Device and Method of Providing Rad Hard Power Transistor with 1200v Breakdown VoltageICEMOS TECH LIMITED·Filed 2022·Application pending·0 cites
- 3844US2023067511A1High-Breakdown Voltage, Low RDSON Electrical Component with Dissimilar Semiconductor LayersICEMOS TECH LIMITED·Filed 2022·Application pending·0 cites
- 3944US2008272429A1Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devicesICEMOS TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 4043US2023061047A1Semiconductor Device and Method of Forming Sacrificial Heteroepitaxy Interface to Provide Substantially Defect-Free Silicon Carbide SubstrateICEMOS TECH LIMITED·Filed 2022·Application pending·0 cites
- 4142US2006266709A1Method of separating optical isomers through supercritical fluid chromatographyDAICEL CHEM·Filed 2006·Application pending·0 cites
- 4237USD401265SElectronic keyboard musical instrumentYAMAHA CORP·Filed 1997·Granted Nov 17, 1998·3 cites·1 claims
- 4334US3934139AApparatus for measuring calorific power of hydrocarbon compoundsYOKOGAWA ELECTRIC WORKS LTD·Filed 1973·Granted Jan 20, 1976·6 cites·11 claims
- 4434US2010277472A1Method and system for capturing 3d images of a human body in a moment of movementKALTENBACH CHRISTOPHER·Filed 2010·Application pending·0 cites
- 4532US2001017701A1Peripheral device for information processing and information processing systemFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →