Inventor · disambiguated record
Taek-Soo Jeon
Also filed as: JEON TAEK-SOO
18 granted patents·8 pending applications·66 citations·filing 2004–2019
91Inventor score
Files withSAMSUNG ELECTRONICS CO LTD20CHO HAG-JU2JEON TAEK-SOO2LEE DONG SOO1SAMSUNG ELECTRONICS CO INC1
Top patents by PatentIndex Score
26 records- 0195US9054189B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 9, 2015·28 cites·15 claims
- 0282US7390719B2Method of manufacturing a semiconductor device having a dual gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·10 cites·20 claims
- 0381US11257857B2Image sensors including photoelectric conversion devices, trench, supporter, and isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 22, 2022·1 cites·19 claims
- 0479US10177042B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 8, 2019·3 cites·19 claims
- 0574US9786761B2Integrated circuit device having an interfacial layer and method of manufacturing the sameLEE DONG-SOO·Filed 2015·Granted Oct 10, 2017·2 cites·19 claims
- 0669US6930062B2Methods of forming an oxide layer in a transistor having a recessed gateSAMSUNG ELECTRONICS CO INC·Filed 2004·Granted Aug 16, 2005·12 cites·9 claims
- 0768US7494859B2Semiconductor device having metal gate patterns and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·4 cites·22 claims
- 0866US8697570B2Semiconductor device including contact plug and method of manufacturing the sameJEON TAEK-SOO·Filed 2010·Granted Apr 15, 2014·3 cites·16 claims
- 0963US7531881B2Semiconductor devices having transistors with different gate structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·2 cites·14 claims
- 1060US8039344B2Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 18, 2011·1 cites·15 claims
- 1155US10998381B2Semiconductor image sensors having upper and lower transparent electrodes thereinSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 4, 2021·0 cites·20 claims
- 1254US10854677B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 1352US7892958B2Methods of fabricating semiconductor devices having transistors with different gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 22, 2011·0 cites·4 claims
- 1450US8928152B2Semiconductor device including contact plug and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 6, 2015·0 cites·7 claims
- 1547US7727841B2Method of manufacturing semiconductor device with dual gatesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 1, 2010·0 cites·15 claims
- 1644US7399670B2Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·0 cites·19 claims
- 1743US9412842B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 9, 2016·0 cites·20 claims
- 1843US2007026596A1Gate electrode structure and method of forming the same, and semiconductor transistor having the gate electrode structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1943US2010193875A1Semiconductor device with dual gates and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2041US2008023765A1Semiconductor Devices and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2140US2007128775A1Method of manufacturing a semiconductor device having a tungsten carbon nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2239US9929252B2Method of forming thin film and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 27, 2018·0 cites·14 claims
- 2337US2009134448A1Non-volatile memory device and method of forming the sameJEON TAEK-SOO·Filed 2008·Application pending·0 cites
- 2435US2017256544A1Semiconductor device including mos transistorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 2535US2007026621A1Non-volatile semiconductor devices and methods of manufacturing the sameCHO HAG-JU·Filed 2006·Application pending·0 cites
- 2634US2007059929A1Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the sameCHO HAG-JU·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →