Inventor · disambiguated record
Tai-Kun Kao
Also filed as: KAO TAI-KUN
9 granted patents·1 pending application·12 citations·filing 2002–2025
81Inventor score
Top patents by PatentIndex Score
10 records- 0190US11830700B2Repellent electrode for electron repellingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·2 cites·20 claims
- 0283US11295926B2Repellent electrode for electron repellingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·3 cites·20 claims
- 0379US12243707B2Repellent electrode for electron repellingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 0478US12412725B2Adjustable support for arc chamber of ion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 0576US2025323004A1Adjustable support for arc chamber of ion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0673US9741537B1Method and apparatus for supplying ion beam in ion implantation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 22, 2017·2 cites·20 claims
- 0767US12002647B2Adjustable support for arc chamber of ion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 0850US6688017B2Method and apparatus for aligning an extraction electrode to an arc chamberTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 10, 2004·4 cites·13 claims
- 0947US10319557B2Ion generator and method for using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·0 cites·20 claims
- 1039US7023003B2Ion implanter and method of preventing undesirable ions from implanting a target waferTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 4, 2006·1 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →