Inventor · disambiguated record
Takaaki Kawahara
Also filed as: KAWAHARA TAKAAKI · YAMADA AKIRA
31 granted patents·9 pending applications·1,216 citations·filing 1994–2015
98Inventor score
Files withMITSUBISHI ELECTRIC CORP21RENESAS ELECTRONICS CORP4RENESAS TECH CORP3KAWAHARA TAKAAKI2SAKASHITA SHINSUKE2
Top patents by PatentIndex Score
40 records- 0199US6096133AChemical vapor deposition apparatusMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 1, 2000·409 cites·3 claims
- 0296US5776254AApparatus for forming thin film by chemical vapor depositionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 7, 1998·132 cites·2 claims
- 0393US5760366AThin film forming apparatus using laser and magnetic fieldMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 2, 1998·87 cites·3 claims
- 0488US6110291AThin film forming apparatus using laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 29, 2000·67 cites·3 claims
- 0587US7268047B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Sep 11, 2007·12 cites·8 claims
- 0687US6273957B1Vaporizing device for CVD source materials and CVD apparatus employing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 14, 2001·28 cites·20 claims
- 0786US5834060AHigh dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin filmMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 10, 1998·62 cites·3 claims
- 0885US6470144B1Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 22, 2002·66 cites·4 claims
- 0983US6638880B2Chemical vapor deposition apparatus and a method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 28, 2003·23 cites·3 claims
- 1078US6312526B1Chemical vapor deposition apparatus and a method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 6, 2001·45 cites·15 claims
- 1178US6101085AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 8, 2000·40 cites·4 claims
- 1276US6179920B1CVD apparatus for forming thin film having high dielectric constantMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 30, 2001·43 cites·5 claims
- 1375US6110283AChemical vapor deposition apparatusMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 29, 2000·47 cites·18 claims
- 1474US8293632B2Manufacturing method of semiconductor deviceKADOSHIMA MASARU·Filed 2010·Granted Oct 23, 2012·5 cites·19 claims
- 1571US7855134B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Dec 21, 2010·4 cites·20 claims
- 1664US6512885B1Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 28, 2003·9 cites·7 claims
- 1764US5669976ACVD method and apparatus thereforMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 23, 1997·37 cites·8 claims
- 1863US6022811AMethod of uniform CVDMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 8, 2000·28 cites·8 claims
- 1957US7087495B2Method for manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Aug 8, 2006·5 cites·20 claims
- 2057US6984565B2Method of manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Jan 10, 2006·5 cites·18 claims
- 2156US5989635AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 23, 1999·14 cites·1 claims
- 2255US7034369B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Apr 25, 2006·5 cites·15 claims
- 2354US6235649B1Method of forming high dielectric constant thin film and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 22, 2001·16 cites·8 claims
- 2451US9105739B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 11, 2015·0 cites·5 claims
- 2547US9455264B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Granted Sep 27, 2016·0 cites·9 claims
- 2645US5882410AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 16, 1999·11 cites·1 claims
- 2744US2005249876A1Film forming apparatus and methodSEMICONDUCTOR LEADING EDGE TEC·Filed 2005·Application pending·0 cites
- 2843US6033732AApparatus for and method of forming thin film by chemical vapor depositionMITSUSHITA DENKI KABUSHIKI KAI·Filed 1998·Granted Mar 7, 2000·7 cites·2 claims
- 2942US2001039923A1Vaporizing device for CVD source materials and CVD apparatus employing the sameFiled 2001·Application pending·0 cites
- 3041US6448191B2Method of forming high dielectric constant thin film and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 10, 2002·0 cites·6 claims
- 3141US6117482AMethod and apparatus for monitoring CVD liquid source for forming thin film with high dielectric constantMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 12, 2000·8 cites·6 claims
- 3241US2008128833A1High-Dielectric-Constant Film, Field-Effect Transistor and Semiconductor Integrated Circuit Device Using the Same, and Method for Producing High-Dielectric-Constant FilmKAWAHARA TAKAAKI·Filed 2005·Application pending·0 cites
- 3341US2008121999A1Semiconductor device which has mos structure and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3439US8120118B2Semiconductor device and manufacturing method of the sameSAKASHITA SHINSUKE·Filed 2010·Granted Feb 21, 2012·0 cites·5 claims
- 3537US2012056268A1Semiconductor device and manufacturing method thereofMIZUTANI MASAHARU·Filed 2011·Application pending·0 cites
- 3636US2005051857A1Semiconductor deviceSEMICONDUCTOR LEADING EDGE TEC·Filed 2004·Application pending·0 cites
- 3736US2012045876A1Method for manufacturing a semiconductor deviceKAWAHARA TAKAAKI·Filed 2011·Application pending·0 cites
- 3834US2010320542A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 3932US6165556AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 26, 2000·1 cites·4 claims
- 4030US2011284971A1Semiconductor device and manufacturing method thereofSAKASHITA SHINSUKE·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →