Inventor · disambiguated record
Tatsuya Kishi
Also filed as: KISHI TATSUYA
130 granted patents·16 pending applications·2,588 citations·filing 1999–2023
99Inventor score
Top patents by PatentIndex Score
146 records- 0199US6611405B1Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2000·Granted Aug 26, 2003·185 cites·3 claims
- 0298US8036025B2Magnetoresistive elementTOSHIBA KK·Filed 2010·Granted Oct 11, 2011·33 cites·36 claims
- 0398US7768824B2Magnetoresistive element and magnetoresistive random access memory including the sameTOSHIBA KK·Filed 2008·Granted Aug 3, 2010·58 cites·18 claims
- 0498US7663197B2Magnetoresistive elementTOSHIBA KK·Filed 2006·Granted Feb 16, 2010·97 cites·21 claims
- 0598US7596015B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2007·Granted Sep 29, 2009·94 cites·23 claims
- 0698US6937447B2Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memoryTOSHIBA KK·Filed 2002·Granted Aug 30, 2005·82 cites·21 claims
- 0797US8716818B2Magnetoresistive element and method of manufacturing the sameYOSHIKAWA MASATOSHI·Filed 2012·Granted May 6, 2014·49 cites·20 claims
- 0897US8009465B2Magnetoresistive elementTOSHIBA KK·Filed 2009·Granted Aug 30, 2011·55 cites·17 claims
- 0997US6751074B2Magnetic memory having antiferromagnetically coupled recording layerTOSHIBA KK·Filed 2003·Granted Jun 15, 2004·83 cites·6 claims
- 1097US6069820ASpin dependent conduction deviceTOSHIBA KK·Filed 1999·Granted May 30, 2000·151 cites·31 claims
- 1196US8363462B2Magnetoresistive elementTOSHIBA KK·Filed 2011·Granted Jan 29, 2013·21 cites·23 claims
- 1296US8279663B2Magnetoresistance effect element and magnetic random access memoryNAKAYAMA MASAHIKO·Filed 2011·Granted Oct 2, 2012·33 cites·12 claims
- 1396US7924607B2Magnetoresistance effect element and magnetoresistive random access memory using the sameTOSHIBA KK·Filed 2008·Granted Apr 12, 2011·38 cites·23 claims
- 1496US6995962B2Ferromagnetic double tunnel junction element with asymmetric energy bandTOSHIBA KK·Filed 2004·Granted Feb 7, 2006·114 cites·24 claims
- 1596US6765824B2Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memoryTOSHIBA KK·Filed 2003·Granted Jul 20, 2004·127 cites·20 claims
- 1696US6605836B2Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic informationTOSHIBA KK·Filed 2002·Granted Aug 12, 2003·64 cites·17 claims
- 1795US8014193B2Magnetoresistance effect element and magnetic random access memoryTOSHIBA KK·Filed 2009·Granted Sep 6, 2011·41 cites·12 claims
- 1895US7957184B2Magnetoresistive element and magnetoresistive random access memory including the sameTOSHIBA KK·Filed 2010·Granted Jun 7, 2011·17 cites·33 claims
- 1994US8299552B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2008·Granted Oct 30, 2012·33 cites·18 claims
- 2094US7355884B2Magnetoresistive elementTOSHIBA KK·Filed 2005·Granted Apr 8, 2008·28 cites·18 claims
- 2193US8139405B2Magnetoresistive element and magnetoresistive random access memory including the sameYOSHIKAWA MASATOSHI·Filed 2011·Granted Mar 20, 2012·13 cites·15 claims
- 2293US8098514B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2008·Granted Jan 17, 2012·49 cites·24 claims
- 2393US7345852B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2006·Granted Mar 18, 2008·21 cites·3 claims
- 2493US7038894B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2005·Granted May 2, 2006·18 cites·5 claims
- 2593US6556473B2Magnetic memory with reduced write currentTOSHIBA KK·Filed 2001·Granted Apr 29, 2003·74 cites·24 claims
- 2692US9166151B2Magnetoresistive element and manufacturing method of the sameTOSHIBA KK·Filed 2013·Granted Oct 20, 2015·10 cites·8 claims
- 2792US8218355B2Magnetoresistive element and magnetic memoryKITAGAWA EIJI·Filed 2009·Granted Jul 10, 2012·23 cites·25 claims
- 2892US7920361B2Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and ScTOSHIBA KK·Filed 2007·Granted Apr 5, 2011·23 cites·26 claims
- 2992US6987653B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2004·Granted Jan 17, 2006·29 cites·5 claims
- 3092US6839206B2Ferromagnetic double tunnel junction element with asymmetric energy bandTOKYO SHIBAURA ELECTRIC CO·Filed 2002·Granted Jan 4, 2005·34 cites·23 claims
- 3191US8154915B2Magnetoresistive element and magnetoresistive random access memory including the sameYOSHIKAWA MASATOSHI·Filed 2011·Granted Apr 10, 2012·11 cites·54 claims
- 3290US9799383B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 24, 2017·10 cites·20 claims
- 3390US9042166B2Magnetoresistive effect element and method of manufacturing magnetoresistive effect elementTOSHIBA KK·Filed 2013·Granted May 26, 2015·8 cites·8 claims
- 3489US9570671B2Magnetic memory deviceYOSHIKAWA MASATOSHI·Filed 2014·Granted Feb 14, 2017·5 cites·10 claims
- 3588US8895162B2Magnetoresistive element and magnetic memoryNISHIYAMA KATSUYA·Filed 2011·Granted Nov 25, 2014·13 cites·7 claims
- 3688US7518907B2Magnetoresistive elementTOSHIBA KK·Filed 2008·Granted Apr 14, 2009·15 cites·15 claims
- 3788US7190613B2Magnetic random access memory device having thermal agitation property and high write efficiencyTOSHIBA KK·Filed 2004·Granted Mar 13, 2007·47 cites·24 claims
- 3888US6949779B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2003·Granted Sep 27, 2005·39 cites·25 claims
- 3987US8223533B2Magnetoresistive effect device and magnetic memoryOZEKI JYUNICHI·Filed 2009·Granted Jul 17, 2012·24 cites·11 claims
- 4087US8139403B2Spin memory and spin transistorINOKUCHI TOMOAKI·Filed 2010·Granted Mar 20, 2012·10 cites·13 claims
- 4187US7787288B2Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memoryTOSHIBA KK·Filed 2007·Granted Aug 31, 2010·13 cites·5 claims
- 4287US7593193B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2007·Granted Sep 22, 2009·8 cites·1 claims
- 4387US7240419B2Method of manufacturing a magnetoresistance effect elementTOSHIBA KK·Filed 2004·Granted Jul 10, 2007·14 cites·3 claims
- 4487US6879475B2Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic headTOSHIBA KK·Filed 2002·Granted Apr 12, 2005·18 cites·31 claims
- 4587US6590803B2Magnetic memory deviceTOSHIBA KK·Filed 2002·Granted Jul 8, 2003·45 cites·20 claims
- 4686US7023725B2Magnetic memoryTOSHIBA KK·Filed 2004·Granted Apr 4, 2006·32 cites·40 claims
- 4786US6717845B2Magnetic memoryTOSHIBA KK·Filed 2003·Granted Apr 6, 2004·33 cites·27 claims
- 4885US10937947B2Magnetic memory device with a nonmagnet between two ferromagnets of a magnetoresistive effect elementTOSHIBA MEMORY CORP·Filed 2019·Granted Mar 2, 2021·2 cites·16 claims
- 4985US10910032B2Magnetoresistive memory device with different write pulse patternsTOSHIBA MEMORY CORP·Filed 2019·Granted Feb 2, 2021·5 cites·10 claims
- 5085US10067287B2Optical fiber and method of manufacturing the sameFUJIKURA LTD·Filed 2015·Granted Sep 4, 2018·2 cites·9 claims
Showing the top 50 of 146 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →